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Critical Transient Processes Of Enhancement-Mode Gan HEMTs

In High-Efficiency And High-Reliability Applications Download Now > Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by GaN Systems, analytically models its switching behaviors, summarizes the impact…

Gallium Nitride Sets Innovation Bars Higher

The following article, written by Mathew Dirjish, originally appeared in Sensors Online. Silicon has been the mainstay of semiconductor fabrication for as long as one can remember. It is the meat of transistors, OP amps, microprocessors, MCUs, PLCs, and numerous other devices. The material has proven more than viable and reliable and will be with…

Ottawa tech firm GaN Systems revved up about BMW investment

This article, written by David Sali, was originally published in the Aug. 25th issue of the Ottawa Business Journal. Kanata company’s next-generation semiconductor technology attracts multimillion-dollar injection of equity led by German automaker A Kanata firm that makes transistors that help electric and autonomous vehicles run more efficiently has landed millions in funding from one…

LTSpice Switching Loss Simulation vs Actual

Newly Enhanced LTSpice Model Simplifies Designing with GaN

Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires…

BMW i Ventures Leads Strategic Investment in GaN Systems

Mountain View – July 18, 2017 – GaN Systems, the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes that GaN Systems’ products maximize the efficiency of electronic systems while dramatically reducing size,…

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article was originally published in the June 2017 issue of Bodo’s Power Systems. Research on wide bandgap (WBG) devices has been conducted for many years. The reason that the properties of Gallium Nitride (GaN) and Silicon Carbide (SiC) excite power engineers is because they show substantial performance improvements over their silicon-based counterparts. By Jason…

Customer Products on Display at PCIM 2017

This video, originally published on Electronics Products Magazine’s YouTube channel, was recorded at PCIM 2017. GaN Systems’ CEO, Jim Witham, talks with Alix Paultre about the adoption of GaN technology and describes some of the 30+ customer products displayed at PCIM that are performance-optimized by GaN transistors. Watch on YouTube >

Paralleled GaN Transistors Boost Converter Power Up to 100kW

This article was written by Sam Davis and first appeared in powerelectronics.com. Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. Characteristics…

GaN at PCIM 2017: Customers Smashing Power Density Records Using GaN Systems’ Transistors

The above photo was provided by 3NERGY. From 70 W to 70 kW, customers continue to make giant steps in size reduction OTTAWA, Ontario, May 10, 2017 – Everybody knows GaN can increase efficiency and reduce size. However, seeing is believing. By replacing legacy MOSFETs with gallium nitride (GaN) transistors, GaN Systems’ customers improve system…

PFC Design – Maximizing Efficiency and Lowering Cost with GaN Transistors

GaN Systems releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design OTTAWA, Ontario, May 9, 2017 – Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the diodes…

GaN Systems Consumer Articles

Critical Transient Processes Of Enhancement-Mode Gan HEMTs

Gallium Nitride Sets Innovation Bars Higher

Ottawa tech firm GaN Systems revved up about BMW investment

Newly Enhanced LTSpice Model Simplifies Designing with GaN

BMW i Ventures Leads Strategic Investment in GaN Systems

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

Customer Products on Display at PCIM 2017

Paralleled GaN Transistors Boost Converter Power Up to 100kW

GaN at PCIM 2017: Customers Smashing Power Density Records Using GaN Systems’ Transistors

PFC Design – Maximizing Efficiency and Lowering Cost with GaN Transistors

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