Part NumberGS-065-060-3-T
DownloadsDatasheet
Spice Models
Step File
Altium Library

ECAD Model

VDS650 V
IDS60 A
RDS(on)25 mΩ
QG14 nC
Dimensions (mm)9.2 x 7.8 x 0.49
CoolingTop-Side

GS-065-060-3-T

650V Enhancement Mode GaN Transistor

The GS-065-060-3-T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Top-cooled, low inductance GaNPX® package
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Small 9.2 x 7.8 mm2 footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptable Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

Related Videos:

GaN Systems – GaNpx Packaging Process Flow

GaN Powered: Revolutionizing Today’s Most Power Demanding Industries