Part NumberGS66516B
Spice Models
Step File
Allegro Library
Altium Library
Evaluation BoardsGSP65RXXHB-EVB
RDS(on)25 mΩ
QG14.2 nC
Dimensions (mm)11.0 x 9.0 x 0.51
TR QTY2000
MR Size24 mm x 7″
TR Size24 mm x 13″


650V Enhancement Mode GaN Transistor

The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pads for optimized gate drive
  • Dual gate and source sense pads for optimal board layout
  • RoHS 3 (6+4) compliant


  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Charters
  • Uninterruptible Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer


High Power IMS Evaluation Platform

This Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® E-HEMTs on an Insulated Metal Substrate for high power applications. The platform consists of a motherboard and separate Half bridge IMS modules (3kW and 6kW).

These assemblies can be configured into any of 12 different topologies, architectures and operating modes. The IMS Evaluation modules can also be purchased independently for use as a high power GaN intelligent power module (IPM) to be used with the designer’s own board for in-system prototyping.

IMS Platform Motherboard

IMS Evaluation Modules Half Bridge with Gate Drive
GSP65R13HB-EVB: 650V/13mOhm, 4-7kW
GSP65R25HB-EVB: 650V/25mOhm, 2-4kW

Half bridge/Full bridge Configuration Options
Configuration options


High Power IMS2 Evaluation Platform

This horizontal Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-HEMTs in high power applications.

The optimized thermal and electrical designs provide a excellent reference for implementing a low cost, high performance design.

Features and Benefits

  • Enhanced thermal and mechanical design
  • Ultra low inductance, bottom-cooled GaNPX® package
  • Minimizing parasitic elements of the power and gate drive loops via magnetic flux-cancellation
  • High performance switching with low EMI
  • Scalable and parallelable GaNPX® packaging for applications up to 100 kW
  • Low cost thermal solution for high power applications.

The platform consists of a gate drive motherboard and separate Half Bridge IMS evaluation boards (3kW and 6kW). The motherboard layout is configured to drive 1 or 2 half bridge circuits or 1 full bridge circuit.

IMS2 platform gate drive motherboard

IMS2 half bridge evaluation boards


3kW High Efficiency Bridgeless Totem Pole PFC Reference Design

This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors


  • Continuous conduction mode (CCM) BTP PFC reference design
  • Digital power control
  • 90-264 Vrms Universal input
  • 3 kW power (1.5 kW at low line), 400 Vdc output
  • 99% peak efficiency, 0.99 power factor
  • Small form factor, 127 x 124 x 40 mm3


  • High power density: 78 W/in3
  • GSP66516BHB-EVBIMS2 Insulated Metal Substrate based design
  • Excellent thermal performance
  • Low cost implementation
  • EMI compliant (EN55033 Class A CE)
  • Includes surge protection, auxiliary power and fan cooling
  • Robust, 1MHz bandwidth sensing, cycle-by-cycle current control