Part NumberGS66516B
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS650 V E-HEMT
IDS60 A
RDS(on)25 mΩ
QG14.2 nC
Dimensions (mm)11.0 x 9.0 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY2000
MR Size24 mm x 7″
TR Size24 mm x 13″

GS66516B

650V Enhancement Mode GaN Transistor

The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pads for optimized gate drive
  • Dual gate and source sense pads for optimal board layout
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Charters
  • Uninterruptible Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

Evaluation Boards