Part NumberGS61008P
Spice Models
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61008P-EVBHF
(Buck Converter with High Frequency GaN Driver)
RDS(on)8 mΩ
QG8 nC
Dimensions (mm)7.5 x 4.6 x 0.51
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″


100V Enhancement Mode GaN Transistor

The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.6 x 4.6 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant


  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive
  • Robotics
  • Wireless Power Transfer


100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of our GaN E-HEMT in a high-performance DC/DC synchronous buck environment.

Designed for optimal performance at high switching speeds, this is a suitable development platform for applications that favor reduced physical size, weight and cost. Target applications include Class D amplifiers, DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR.

  • Universal GaN half bridge with open loop control
  • World’s fastest switching times, < 1ns
  • Dead time control, independent of Vcc
  • 100V / 90A, 7mΩ GaN E-HEMTs
  • High speed GaN driver, capable of 40MHz


100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer

The GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61008P E-HEMTs in a 100W 6.78MHz class EF2 power amplifier.

Target applications include the wireless charging and powering of computer laptops, power tools, consumer electronics, portable devices, drones, AGV and more.

  • Multiple configurations – constant current mode or constant voltage mode
  • Push-pull with EMI filter
  • Single ended mode with/without EMI filter
  • 100V / 90A, 7mΩ GaN E-HEMTs
  • High speed GaN driver
  • Over temperature protection


GaN Audio Class D Evaluation Boards

GaN E-HEMT fast switching, low Coss, and zero QRR enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply designs are optimized for sound quality, thermal performance, size, and cost.

2-channel Class D Amplifier

  • 200W per Channel into 8Ω
  • 300W per Channel into 4Ω
  • < 0.01% THD+N (8Ω, 1W, 20Hz to 20kHz)
  • 20Hz‐20kHz +/‐0.5dB Freq. Response (8Ω)
  • Bridge-Tied-Load (BTL) design

Companion Switch Mode Power Supply

  • Complete Stand‐alone Dual‐Rail LLC SMPS
  • 400W Continuous Duty, 550W Peak Power
  • GaN PFC and Half‐Bridge LLC Topology
  • Fully‐Regulated, Split‐Rail Outputs
  • No heatsinking, no cooling
  • EMI/EMC friendly

GaN Class D audio amplifier (Amp)

Companion switch mode power supply (SMPS)

Bundle: Amp + SMPS