Part NumberGS61008P
DownloadsDatasheet
LTSpice
PSpice
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61008P-EVBHF
(Buck Converter with High Frequency GaN Driver)
VDS100 V E-HEMT
IDS90 A
RDS(on)7 mΩ
QG12 nC
Dimensions (mm)7.5 x 4.6 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS61008P

100V Enhancement Mode GaN Transistor

The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.6 x 4.6 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive

EVALUATION BOARD: GS61008P-EVBHF

100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of our GaN E-HEMT in a high-performance DC/DC synchronous buck environment.

Designed for optimal performance at high switching speeds, this is a suitable development platform for applications that favor reduced physical size, weight and cost. Target applications include Class D amplifiers, DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR.

  • Universal GaN half bridge with open loop control
  • World’s fastest switching times, < 1ns
  • Dead time control, independent of Vcc
  • 100V / 90A, 7mΩ GaN E-HEMTs
  • High speed GaN driver, capable of 40MHz

EVALUATION BOARD: GSWP100W-EVBPA

100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer

The GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61008P E-HEMTs in a 100W 6.78MHz class EF2 power amplifier.

Target applications include the wireless charging and powering of computer laptops, power tools, consumer electronics, portable devices, drones, AGV and more.

  • Multiple configurations – constant current mode or constant voltage mode
  • Push-pull with EMI filter
  • Single ended mode with/without EMI filter
  • 100V / 90A, 7mΩ GaN E-HEMTs
  • High speed GaN driver
  • Over temperature protection