Part NumberGS61008P
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS100 V E-HEMT
IDS90 A
RDS(on)8 mΩ
QG8 nC
Dimensions (mm)7.5 x 4.6 x 0.51
CoolingBottom-Side

GS61008P

100V Enhancement Mode GaN Transistor

The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.6 x 4.6 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive
  • Robotics
  • Wireless Power Transfer

Evaluation Boards