Part NumberGS-065-004-1-L
DownloadsDatasheet
Design Note
LTSpice
Step File
Allegro Library
Altium Library
Evaluation BoardsComing soon
VDS650 V E-HEMT
IDS3.5 A
RDS(on)500 mΩ
QG0.7 nC
Dimensions (mm)5.0 x 6.0 x 0.85
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size12 mm x 7″
TR Size12 mm x 13″

GS-065-004-1-L

650V Enhancement Mode GaN Transistor

The GS-065-004-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6 mm PDFN package that offers low junction-to-case thermal resistance.  These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Small 5×6 mm PDFN package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V )
  • Very high switching frequency (> 20 MHz)
  • Fast and controllable fall and rise times
  • Source Sense pad for optimized gate drive
  • Reverse current capability
  • Zero reverse recovery loss
  • RoHS 6 compliant

APPLICATIONS

  • Power adapters
  • LED lighting drivers
  • Fast battery charging
  • LLC converters
  • Power Factor Correction
  • Appliance motor drives
  • Wireless power transfer
  • Industrial power supplies