| Part Number | GS66508T |
|---|---|
| Downloads | Datasheet LTSpice PSpice Step File Allegro Library Altium Library |
| Evaluation Boards | GS665MB-EVB (Mother board) GS66508T-EVBDB |
| Reference Design | GS66508T-EVBHB (650 V, 2 kW GaN E-HEMT half bridge) |
| VDS | 650 V E-HEMT |
| IDS | 30 A |
| RDS(on) | 50 mΩ |
| QG | 5.8 nC |
| Dimensions (mm) | 7.0 x 4.5 x 0.54 |
| Cooling | Top-Side |
| MR QTY | 250 |
| TR QTY | 3000 |
| MR Size | 16 mm x 7″ |
| TR Size | 16 mm x 13″ |
GS66508T
650V Enhancement Mode GaN Transistor
The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10V )
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.0 x 4.5 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 6 compliant
- High efficiency power conversion
- High density power conversion
- AC-DC Converters
- Bridgeless Totem Pole PFC
- ZVS Phase Shifted Full Bridge
- Half Bridge topologies
- Synchronous Buck or Boost
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Single and 3Φ inverter legs
- Solar and Wind Power
- Fast Battery Charging
- Class D Audio amplifiers
- 400 V input DC-DC converters
- On Board Battery Chargers
- Traction Drive
EVALUATION BOARD: GS665MB-EVB
650 V Universal Motherboard
This universal motherboard can be used with daughter cards (sold separately) to evaluate the entire GaN Systems 650 V family of GaN E-HEMT products.
COMPATIBLE WITH:
- GS66504B-EVBDB
- GS66508B-EVBDB
- GS66508T-EVBDB
- GS66516T-EVBDB
EVALUATION BOARD: GS66508T-EVBDB
650 V GaN E-HEMT daughter board
This product requires a motherboard (GS665MB-EVB)
The GS66508T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design.
- Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation
- Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board
- Current shunt position for switching characterization testing
- Universal form factor and footprint for all products
REFERENCE DESIGN: GS66508T-EVBHB
650 V, 2 kW GaN E-HEMT half bridge
REFERENCE ONLY – Out of stock
The GS66508T-EVBHB evaluation board (EVB) is designed to demonstrate the performance of GaN Systems’ 650V GaN enhancement mode high electron mobility transistor (E-HEMT) devices. The EVB is a fully functional half bridge power stage consisting of two 650V GaN E-HEMTs (top side cooled GS66508T, 30A/55mΩ), gate drive power supply, half bridge gate drivers and heatsink.
To evaluate the performance of GaN E-HEMT devices in real power circuits, the EVB can be easily configured into any half bridge based topology. The board serves as a reference design for:
- Gate driver circuit
- Half bridge PCB layout
- Thermal management
The block diagram of the GS66508T-EVBHB can be seen above. All components are mounted on the top side except for E-HEMTs, Q1 and Q2, which are mounted on the bottom side of the EVB. A heatsink is mounted from the bottom side as well, in order to provide cooling for the two GaN E-HEMTs. The board includes all necessary components for building a half bridge power stage and provides footprints for output power inductors and capacitors to allow users to configure the board into different operational modes.
