The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. The GS-065-011-1-L is a bottom-side cooled transistor in a 5×6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching.