NuCurrent Partners with GaN Systems to Expand Wireless Charging Product Offerings with 150-Watt Solution

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CHICAGO (PRWEB) APRIL 12, 2018– NuCurrent, an industry leader in wireless power systems and technology development, announces the development of 150-watt wireless power solutions designed for industrial and consumer applications with high power needs. This development, in partnership with GaN Systems, the leader in GaN power transistors, builds upon NuCurrent’s achievements in wireless power and wireless charging, including the development of the thinnest and most efficient 15-watt wireless charging antennas for smartphones.

“We’re excited to bring these new high-power solutions to market,” said NuCurrent VP of Sales and Marketing, Tim Tumilty. “Following the rapid adoption of wireless charging for devices that need a few watts of power, customers are demanding solutions that deliver higher levels of power. Our new solutions solve the most important challenges for product categories that need 150 watts or more.”

Smartphones and small electronic devices typically require less than 15 watts of power and are well suited for silicon-based transistors. However, for wireless charging applications with power needs of 150 watts or more, existing silicon-based transistors can heat up and become inefficient. To address this challenge, NuCurrent selected a 150-watt gallium nitride-based power amplifier from GaN Systems.

“These solutions open up wireless charging to new categories like power tools, autonomous robots, drones, and more,” said GaN Systems Vice President Strategic Marketing, Paul Wiener. “With NuCurrent’s technology and system design capabilities and our high-power transistor and amplifier capabilities, the possibilities for wireless charging at high power levels have been expanded in some really important directions.”

Demonstrations of the 150-watt wireless charging solutions will be available at the upcoming Power Conversion and Intelligent Motion (PCIM) conference June 5-7 in Nuremberg, Germany at the GaN Systems booth (Hall 9, Booth #511).

 

About NuCurrent
NuCurrent delivers breakthrough wireless power solutions to product teams through its expertise in wireless power technologies and full-system integration. The company’s NuIQ™ Technology Platform includes proprietary software that accelerates successful wireless power solution development through advanced hardware simulation and firmware control as along with its patented MLMT antennas – which are the industry’s thinnest and most efficient (highest Q). NuCurrent’s engineering team applies these core technologies in partnership with client product teams to produce complete wireless power solutions on the Qi and Airfuel Standards and within closed, proprietary systems. Founded in 2009, the venture-backed, Chicago-based company has over 75 patents granted or pending worldwide. For more information, visit http://www.nucurrent.com and follow us on Twitter at @NuCurrentTweets.

About GaN Systems
GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.

As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

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Shorter Time to Market Now in Play with New GaN Systems’ High-Performance Buck Converter Evaluation Board

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OTTAWA, Ontario, Canada, February 27, 2018– GaN Systems, the global leader in GaN power semiconductors, today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistor and pSemi’s PE29101 integrated high-speed driver. The outputs of the pSemi driver can provide switching transition speeds in the sub nano-second range.

This evaluation board allows customers to benefit from higher switching speeds, enabling smaller peripheral components in a variety of applications including DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR. This product will be showcased at the Applied Power Electronics Conference & Exposition (APEC) in GaN Systems’ Booth #1041.

“GaN has a robust ecosystem of quality partners like pSemi,” said Peter Di Maso, Director, Product Line Management at GaN Systems. “Working with pSemi, we’ve been able bring faster switching, higher frequencies, and higher power density solutions to customers so they can leverage the numerous and irrefutable benefits of our industry leading GaN E-HEMTs. These benefits come together to reduce power losses, size, weight, and system costs.”

GaN E-HEMTs exhibit much higher efficiencies than MOSFETs and exceeds performance in terms of switching speed, parasitic capacitance, switching loss, and thermal characteristics. This evaluation board highlights the high frequency, high speed, and high efficiency performance of GaN Systems products.

Please visit www.gansystems.com for more information and at major distributors, or come see GaN Systems at Booth #1041 at APEC.

 

About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.

As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn.

 

Media Contact:

Mary Placido

Trier and Company for GaN Systems

mary@triercompany.com

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SiC vs GaN Head-to-Head Performance Comparison

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A lot of engineers don’t have a good feel for how gallium-nitride FETs perform compared to silicon-carbide equivalents. So GaN Systems devised two 650-V, 15-A switching supplies using SiC and GaN to see how they compared. In an interview conducted by WTWH Media’s Lee Teschler, Jim Witham explains the differences that emerged in this head-to-head study.

Watch on YouTube >

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Design Power Electronics: HF Power Semiconductor Modeling

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Download PDF Now >

This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.

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台達與BMW i VENTURES一起參與加入作為GaN Systems公司的策略投資者

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2017年12月11日，加拿大安大略省渥太華 – 作為全球氮化鎵功率半導體行業的領先企業GaN Systems公司日前宣布，全球電源系統行業的領導者 台達已決定與BMW i Ventures一起參與加入作為GaN Systems公司的策略投資者。GaN Systems公司計劃利用這筆新投入的資金來拓展全球銷售通路並加速新產品的創新，以幫助客戶降低整體系統成本，增加營業額並擴張市場的佔有率。 今天的新聞發布是繼BMW i Ventures，BDC Capital，Chrysalix Venture Capital，Cycle Capital Management，RockPort Capital和Tsing Capital等知名策略投資者之後的最新投資訊息。

BMW i Ventures公司常務董事Uwe Higgen表示：“這項投資重申了GaN Systems公司正在創造最節能的電力電子與電源系統的未來發展，繼續不懈努力。 同時也正在開創一種新的方式來設計和創造更輕，更小的電源系統，同時提供更有效和最可靠的電源轉換技術。

GaN Systems公司的首席執行官Jim Witham表示：“在過去的十年中，GaN Systems公司已經實現了將公司經營成為全球最大的氮化鎵功率晶體管製造商和全球氮化鎵功率器件市場領先廠商的目標。我們很榮幸有台達加入我們作為一個策略性的企業投資者。有著台達和BMW i Ventures的策略投資合作夥伴，這是一個巨大的信心，能將GaN Systems公司的技術領先地位與策略投資者相結合，而正在朝著解決電力轉換浪費能源的普遍問題邁出重要的一步。

這項策略合作投資，將是GaN Systems公司的特殊一年且是重要的里程碑，將與客戶一起歷經市場的快速增長，尤其是Notebook電源適配器，計算機伺服器電源和工業電機馬達控制應用的需求日益增長。GaN Systems公司的解決方案使致力於開發更高效率的電力電子與電源系統，以減少全球的電力能源消耗。透過更高效能的系統開發，能夠提供最先進的解決方案應用在消費電子，數據中心，工業控制，電動車運輸和無線充電市場。

對於GaN Systems公司，我們的策略投資合作夥伴不論是台達和BMW i Ventures，以及我們在世界各地的客戶 – 共同的目標是透過解決他們的電力電源系統的挑戰改變當今一些最苛刻的行業的經濟。

關於GaN Systems公司
GaN Systems公司是GaN功率半導體領域的全球領先企業，擁有最多元的產品組合，能夠滿足當今要求最苛刻的行業（包括數據中心伺服器，可再生能源系統，汽車，工業電機和消費電子產品）的需求。

作為市場領先的創新者，GaN Systems公司的多元產品提供可以設計更小，更低成本，更高效率的電源轉換系統成為可能。 該公司屢獲殊榮的多元產品提供了系統輕薄小的設計機會，擺脫了以往Silicon晶體管的限制。 透過改變晶體管的特性與性能的規則，GaN Systems公司正支持專業的電源設計公司徹底改變他們的行業，改變世界。 欲了解更多信息，請訪問：www.gansystems.com或Facebook，Twitter和LinkedIn。

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DELTA JOINS BMW i VENTURES AS STRATEGIC INVESTOR IN GAN SYSTEMS

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OTTAWA, Ontario, December 11, 2017 – GaN Systems, the global leader in GaN power semiconductors, has announced that Delta, the worldwide leader in power systems, has joined BMW i Ventures in participation of a strategic investment in GaN Systems. GaN Systems plans to use the funding to expand global sales and accelerate product innovation to help customers reduce system costs, increase revenue and gain market share. Today’s announcement follows previous investments from prominent backers including BMW i Ventures, BDC Capital, Chrysalix Venture Capital, Cycle Capital Management, RockPort Capital and Tsing Capital.

“This investment reaffirms GaN Systems’ continued accomplishment in creating the future of the most energy efficient power electronics,” said Uwe Higgen, Managing Director of BMW i Ventures. “GaN Systems’ is pioneering a new approach to the design and creation of power systems that are smaller and lighter, while simultaneously providing more efficient and reliable power conversion.”  

Jim Witham, CEO of GaN Systems stated: “Over the past decade, GaN Systems has achieved its goal of building the company into the world’s most prominent manufacturer of GaN power transistors and the leading player in the global GaN power device market. We are honored to have Delta join us as a strategic corporate investor. It’s a huge vote of confidence, both in GaN as a technology and GaN Systems’ approach to GaN transistors, to have investment partners such as Delta and BMW i Ventures. With the opportunity to combine the technological leadership of GaN Systems with our strategic investors, we are taking a major step forward in solving the universal problem of energy wasted in power conversion.”

This investment builds on an exceptional year for GaN Systems where the company is experiencing a rapid increase in customer growth and increasingly strong demand for GaN transistors especially in notebook travel adapters, computer server and industrial motor power applications. GaN Systems solutions enable the development of more efficient power systems to reduce global power consumption. By facilitating the development of more efficient systems, customers deliver state-of-the-art solutions across the consumer, datacenter, industrial, transportation and wireless charging markets.

For GaN Systems, our strategic investment partners BMW i Ventures and Delta, as well as our customers around the world – the common goal is about changing the economics of some of today’s most demanding industries by solving their power system challenges.

About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.

As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn.

Media Contacts:

Beth Trier

Trier and Company for GaN Systems

1.415.285.6147

and

Mary Placido

Trier and Company for GaN Systems

1.415.218.3627

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The Top 2018 Trends Impacting the World’s Power and Energy Footprint – Challenges Will Be Met by A Wave of Power Systems Designed to Be Lighter, Smaller, and More Efficient

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OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors, and smart consumer electronics. The dramatic increase in computing, electronics, and global population demands attention to our growing power and efficiency needs. As 2017 draws to a close, GaN Systems, the global leader of GaN (gallium nitride) power semiconductors, today unveils the five trends for 2018 which they believe will have a major impact on the world’s power and energy footprint:

1. Acceleration of Vehicle Electrification Development and Demand  

The future of the auto industry is electrification and autonomy. 2017 was a huge boon for electric transport with major global businesses announcing commitments for electrical vehicle (EV) fleets and investments in electric car charging infrastructure. China, the largest market for automobiles, even announced policies that require automakers in the country to produce more electric cars (at least 10%) beginning in 2019.

GaN Systems expects that there will be an acceleration of EV development, demand, and improvement over the next 12 months. GaN transistors will enable the next generation EVs by reducing size, weight, power loss, and system cost.  Higher power density and lighter weight systems will change the dynamics of battery sizing and management. Faster charging, both wired and wireless, will change consumers’ relationships with, and confidence in their EVs as they move from second or commuter car to main vehicle status.

2. More Efficient Data Centers Will Postpone New Buildouts

An ever-increasing amount of data is being created, stored, and served every day. Social networks, online videos, IoT devices, and automobile ADAS systems are some of the contributors. Looking forward, autonomous cars will generate massively more data. Coughlin Associates, a data storage consulting firm, anticipates that a self-driving car will generate 1 gigabyte of data per second. While we are years away from fully autonomous vehicles taking over our streets and highways, auto manufacturers such as BMW, Ford, and Toyota are proactively planning how to manage and power its data centers for the data deluge.   This flood of data is driving the need for increasingly scalable, efficient, and flexible data center infrastructure. Data centers already consume 2% of global power usage, and could reach 5% per some forecasts.

GaN Systems believes that while data centers are significantly more energy efficient today than in the past decade, steps will be taken to further maximize power utilization through renewable energy use, a focus on improving power systems and cooling methods, and more highly leveraging edge data centers.

3. Democratizing Solar Energy Comes to be Realized with Energy Storage Systems

The energy storage industry is in its nascent stages but shows promise in both commercial and residential areas.  Energy storage systems help manage peak demand, provide backup power, and function as part of an off-grid system when combined with renewable sources of energy. Entire home communities that can operate off the grid are coming very soon. A growing number of home energy storage projects are happening in several cities around the world. One such project highlighted was Mandalay Homes, a new housing development in Prescott Valley, AZ where 2,900 residences will be outfitted with solar and 8 kilowatt-hour energy storage systems.

GaN Systems predicts energy storage systems will improve in efficiency and pricing, which will happen only through new power technologies and techniques.

4. Wireless Charging Becomes Commonplace

One of the most significant trends in consumer electronics is wireless chargeable devices. As consumers accumulate laptops, smartphones, smartwatches, fitness trackers, and other wearables, there is a need to remove the clutter and extra weight associated with multiple wires and chargers. Wireless charging stations like you’ve seen at convenience stores, coffee shops, and other public venues are an ideal solution.

However, some of today’s power transfer solutions requires the charger and device to be in near- perfectly placed alignment and a full charge can take a long time especially when charging multiple devices at once. GaN Systems believes improvements in power technology are eliminating these limitations, making way for new charging designs that allow for the spatial freedom and charge time that consumers want.

5. Growing Emphasis on Energy Savings in Manufacturing Plants and Factories Across the World

Industrial electric motors and drives are critical components that help commercial and industrial plants operate. There is continuing pressure for increasing efficiency through technology and government policy approaches. This includes incentives and introducing more rigorous energy efficiency standards and motor-efficiency regulations. Additionally, smart factory trends and Industry 4.0 initiatives are driving manufacturing plants to revisit layout and space utilization.

GaN Systems predicts that manufacturers will answer the call with a focus on improving high efficiency motor drive technology and integration.

Meeting These Challenges with GaN

At the center of these 2018 trends is power and the need to develop and provide new system design opportunities for smaller, lighter, lower cost, and more efficient power systems.

GaN Systems believes the power electronics industry can do this by seeking new power design approaches. Removing the limitations of yesterday’s silicon by using GaN power transistors, enterprise organizations will usher in new applications capable of transforming the future.

 About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.

As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.  For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn.

Media Inquiries:

Beth Trier

Trier and Company

beth@triercompany.com

415-285-6147

and

Mary Placido

Trier and Company

mary@triercompany.com

415-218-3627

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“It Ain’t So Hard…” by Larry Spaziani

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GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals usually think GaN is highly complicated, but it’s not. They just haven’t seen anything like GaN before. The reality is that with GaN, it ain’t so hard.

At GaN Systems, we have two types of customers – those that jump in and figure it out. And, those who aren’t sure how to get started. So, for those who aren’t sure how to take the first steps, we need to ask ourselves – what’s holding them back?

For those who were initially hesitant with GaN, we have learned that there is a process of learning the subtle differences of GaN, and these differences come down to three unique GaN properties:

  • While the gate drive is different, GaN is easy to drive and just requires a good lay out
  • GaN package is different – but remember, it is just a surface mount package, and all the same rules that customers already know still apply to GaN
  • Although the reverse operating behavior is unique to GaN, it’s easy to understand and highly beneficial

My colleagues and I understand that when customers are introduced to something new, more often than not, they are hesitant to be ‘early adopters’. Preferably, they would like to be shown a product that has been already used in the field by many other companies.

At GaN Systems, we work with thousands of customers across the globe and during their journey with us, they have successfully designed new and innovative solutions with our GaN. By working with our customers to simply describe GaN – notably, how it’s different but only marginally so – our customers are able to realize that with GaN, it ain’t so  hard. Consequently, GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries, including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.

For more information on GaN systems, please visit www.gansystems.com or on Facebook, Twitter and LinkedIn.

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GaN Power Transistors Take Top Honors At 2017 ECN Impact Awards

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GaN power transistors are changing the world and building a reputation as a technology that is enabling high performance, high efficiency, and lower cost power systems. They save millions of watts of power, enable new technologies, and enhance the quality of life – from improving the quality of air we breathe by lowering CO2 emissions to producing superior sound quality of music with Class D audio electronics.

Now in its fourth year, ECN IMPACT Awards celebrates innovative products and services in electronics design. Specifically, the ECN IMPACT Awards recognize, by category, the top products and services for design engineering excellence. At this year’s 2017 ECN IMPACT Awards, GaN power transistors received their share of recognition by taking two of the three awards in the Passive Components and Discrete Semiconductors category.

GaN Systems is honored to receive an award for its Comprehensive Evaluation Platform, which provides designers with a rapid way to evaluate circuit performance and then, design a system for quick time to market. This recognition highlights GaN Systems as an innovator in providing the products and tools which are making a significant impact in today’s world where power consumption is growing swiftly and consequently, so is the global demand for efficiency.

Roughly 10% of the electricity generated worldwide is lost as heat through inefficient power conversion. This is where GaN technology makes the largest impact across industry verticals. Increasing efficiency and reducing the system size is repeated from the consumer electronics we use every day – to the huge data centers that companies rely on to conduct business.

For a complete list of 2017 ECN IMPACT Awards winners, please visit here.

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GaN Systems’ Eval Board Simplifies MegaHertz Power

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Audio Speakers, lasers, and DC-DC wireless chargers hit record performance with GaN

OTTAWA, Ontario – October 19, 2017 – From Beethoven to Beyoncé and from the Allman Brothers to ZZ Top, your music sounds better with higher highs, lower lows, and less harmonic distortion. From heavy-duty industrial cutting lasers to delicate, precise medical lasers, the result is better with fast turn-on, fast turn-off, and short duration power pulses. DC-DC converters for Data Center and high-density wireless chargers require exceptional switching performance in their power stages. The key electrical components that make this all happen are ultrafast power transistors and speedy transistor drivers to deliver precise, megahertz pulses of energy to the intended loads.

GaN Systems announces today the availability of a new Evaluation Board using the world’s fastest combination of GaN power transistors and power drivers. Combining best-in-class GaN transistors with the fastest commercially available GaN transistor driver, the GS61004B-EVBCD evaluation platform is now available with the latest in high-speed GaN E-HEMT drivers from Peregrine Semiconductor. The evaluation kit (GS61004B-EVBCD) combines GaN Systems’ GS61004B power transistors with the fastest GaN transistor driver available – the PE29102 – from Peregrine Semiconductor. This combination on the GS61004B-EVBCD evaluation platform provides power design engineers with a host of added benefits, including:

– Four GS61004B GaN transistors and two PE29102 E-HEMT drivers
– GaN transistors operable up to 100 MHzTransistor driver operable up to 40MHz
– Transistor driver operable up to 40MHz
– Best-in-class propagation delay
– Optimized, Vcc independent, for matched dead time
– Integrated dead-time control, resistor-adjustable

The GS61004B GaN E-HEMTs used in conjunction with the PE29102 high-speed GaN E-HEMT Driver, generate low dead times to minimize crossover distortion in class-D applications. The PE29102’s unique set of phase-control pins enable the same part to be used for both phases in bridge-tied load (BTL) configurations—a technique used in audio amplifiers.

Commenting on this development, Paul Wiener, Vice President Strategic Marketing for GaN Systems stated, “By providing an evaluation kit with GaN Systems’ world’s best power transistors and Peregrine Semiconductor’s fastest-ever GaN transistor driver, design engineers have an easy-to-use platform for optimizing their system’s performance and gaining a competitive advantage. GaN Systems is pleased to provide yet one more tool that makes it easy to design with GaN transistors.”

“By enabling GaN to reach its performance potential, UltraCMOS® technology and Peregrine are playing a role in GaN’s disruption into more mainstream applications,” says Mark Moffat, director of Peregrine’s power management product line. “In the case of audio, GaN technology is enabling the next-generation of class-D audio advancements, and Peregrine is proud to enable GaN in audio and beyond.”

The GS61004B-EVBCD evaluation platform is available worldwide through distribution channels. The evaluation platform includes a GaN E-HEMT Driver GS61004B Full-Bridge evaluation board assembly and detailed User’s Guide. The GS61004B-EVBCD is priced at $99 ea.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.

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