Part NumberGS61008T
DownloadsDatasheet
LTSpice
PSpice
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61008P-EVBBK
(synchronous buck converter)
VDS100 V E-HEMT
IDS90 A
RDS(on)7 mΩ
QG12 nC
Dimensions (mm)7.0 x 4.0 x 0.54
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS61008T

100V Enhancement Mode GaN Transistor

The GS61008T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 4.0 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive

EVALUATION BOARD: GS61008P-EVBBK

100 V GaN E-HEMT Synchronous Buck Converter

The GS61008P-EVBBK demo board allows for evaluation of the GS61008P GaN E-HEMT in a DC/DC synchronous buck environment.

  • Universal GaN half bridge with open loop control
  • On-board PWM dead time generation
  • 48 V – 12 V synchronous buck DC/DC evaluation
  • 100 V / 90 A 7 mOhm GaN E-HEMT