Part NumberGS61008T
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61008P-EVBBK
(synchronous buck converter)
RDS(on)7 mΩ
QG12 nC
Dimensions (mm)7.0 x 4.0 x 0.54
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″


100V Enhancement Mode GaN Transistor

The GS61008T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX®packaging enables low inductance & low thermal resistance in a small package. The GS61008T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 4.0 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant


  • High efficiency power conversion
  • High density power conversion
  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive


100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of our GaN E-HEMT in a high-performance DC/DC synchronous buck environment.

Designed for optimal performance at high switching speeds, this is a suitable development platform for applications that favor reduced physical size, weight and cost. Target applications include Class D amplifiers, DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR.

  • Universal GaN half bridge with open loop control
  • World’s fastest switching times, < 1ns
  • Dead time control, independent of Vcc
  • 100V / 90A, 7mΩ GaN E-HEMTs
  • High speed GaN driver, capable of 40MHz