Part NumberGS66506T
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS650 V E-HEMT
IDS22.5 A
RDS(on)67 mΩ
QG4.5 nC
Dimensions (mm)5.6 x 4.5 x 0.54
CoolingTop-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS66506T

650V Enhancement Mode GaN Transistor

The GS66506T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66506T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology™ die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 5.6 x 4.5 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar and Wind Power
  • Fast Battery Charging
  • Class D Audio amplifiers
  • DC-DC converters
  • On Board Battery Chargers
  • Traction Drive

EVALUATION BOARDS: GS-EVB-AUD-xxx1-GS

GaN Audio Class D Evaluation Boards

GaN E-HEMT fast switching, low Coss, and zero QRR enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply designs are optimized for sound quality, thermal performance, size, and cost

2-channel Class D Amplifier

  • 200W per Channel into 8Ω
  • 300W per Channel into 4Ω
  • < 0.01% THD+N (8Ω, 1W, 20Hz to 20kHz)
  • 20Hz‐20kHz +/‐0.5dB Freq. Response (8Ω)
  • Bridge-Tied-Load (BTL) design

Companion Switch Mode Power Supply

  • Complete Stand‐alone Dual‐Rail LLC SMPS
  • 400W Continuous Duty, 550W Peak Power
  • GaN PFC and Half‐Bridge LLC Topology
  • Fully‐Regulated, Split‐Rail Outputs
  • No heatsinking, no cooling
  • EMI/EMC friendly

GaN Class D audio amplifier (Amp)
GS-EVB-AUD-AMP1-GS

Companion switch mode power supply (SMPS)
GS-EVB-AUD-SMPS1-GS

Bundle: Amp + SMPS
GS-EVB-AUD-BUNDLE1-GS