Part NumberGS61004B
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61004B-EVBCD
(for Class D Amplifiers)
VDS100 V E-HEMT
IDS38 A
RDS(on)16 mΩ
QG3.3 nC
Dimensions (mm)4.6 x 4.4 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size12 mm x 7″
TR Size12 mm x 13″

GS61004B

100V Enhancement Mode GaN Transistor

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency.  GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 4.6 x 4.4 mm2 PCB footprint
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • Enterprise and networking power
  • Uninterruptable power supplies
  • Industrial motor drives
  • Solar power
  • Fast battery charging
  • Class D audio amplifiers
  • Smart home
  • Wireless Power Transfer

EVALUATION BOARD: GS61004B-EVBCD

100 V GaN E-HEMT Full Bridge Evaluation Board

The GS61004B-EVBCD evaluation board allows the user to evaluate our GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

  • Operable up to 5 MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable

EVALUATION BOARD: GSWP050W-EVBPA

50W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer

The GSWP050W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61004B E-HEMTs in a 50W 6.78MHz class EF2 power amplifier.

Target applications include the wireless charging and powering of items such as power tools, toys, professional microphones, handheld point-of-sale devices, household robots and more.

  • Constant current mode
  • Push-pull
  • 100V / 45A, 15mΩ GaN E-HEMTs
  • High speed GaN driver