Part NumberGS61004B
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS100 V E-HEMT
IDS38 A
RDS(on)16 mΩ
QG3.3 nC
Dimensions (mm)4.6 x 4.4 x 0.51
CoolingBottom-Side

GS61004B

100V Enhancement Mode GaN Transistor

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency.  GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 4.6 x 4.4 mm2 PCB footprint
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • Enterprise and networking power
  • Uninterruptable power supplies
  • Industrial motor drives
  • Solar power
  • Fast battery charging
  • Class D audio amplifiers
  • Smart home
  • Wireless Power Transfer

Evaluation Boards

  • GS61004B-EVBCD: 100 V GaN E-HEMT Full Bridge Evaluation Board
  • GSWP050W-EVBPA: 50W, 6.78MHz Class EF2 Power Amplifier For Wireless Power Transfer
  • PE29102: pSemi High-speed FET Driver