Part NumberGS61004B
Step File
Allegro Library
Altium Library
Evaluation BoardsGS61004B-EVBCD
(for Class D Amplifiers)
RDS(on)15 mΩ
QG6.2 nC
Dimensions (mm)4.6 x 4.4 x 0.51
TR QTY3000
MR Size12 mm x 7″
TR Size12 mm x 13″


100V Enhancement Mode GaN Transistor

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (f > 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 4.6 x 4.4 mm2 PCB footprint
  • RoHS 6 compliant


  • High efficiency power conversion
  • High density power conversion
  • Enterprise and networking power
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost


100 V GaN E-HEMT FB EVB Optimized for Class D Amplifiers

The GS61004B-EVBCD evaluation board allows the user to evaluate our GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

  • GaN transistors operable up to 100 MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable


50W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer

The GSWP050W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61004B E-HEMTs in a 50W 6.78MHz class EF2 power amplifier.

Target applications include the wireless charging and powering of items such as power tools, toys, professional microphones, handheld point-of-sale devices, household robots and more.

  • Constant current mode
  • Push-pull
  • 100V / 45A, 15mΩ GaN E-HEMTs
  • High speed GaN driver