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Part NumberGS-065-060-3-B
Spice Models
Step File
Altium Library

ECAD Model

VDS650 V
RDS(on)25 mΩ
QG14 nC
Dimensions (mm)11.0 x 9.0 x 0.45


650V Enhancement Mode GaN Transistor

The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Bottom-cooled, low inductance GaNPX® package
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant


  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Solar Inverters
  • Energy Storage Systems
  • On Board Chargers
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

Replacement Product: GS66516B

Pin-to-Pin Compatible