Part NumberGS-065-060-5-B-A
DownloadsDatasheet
Spice Models
Step File
Altium Library
VDS650 V
IDS60 A
RDS(on)25 mΩ
QG14 nC
Dimensions (mm)11 x 9 x 0.63
CoolingBottom-Side

GS-065-060-5-B-A

650V Automotive E-Mode GaN Transistor

The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) 
  • 650 V enhancement mode power transistor
  • Bottom-cooled, Low inductance GaNPX® package
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Ultra-low FOM
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • On Board Chargers
  • Traction Drive
  • DC-DC converters
  • AC-DC Converters
  • Industrial Motor Drives
  • Solar Inverters
  • Bridgeless Totem Pole PFC