GaN Presented as Being Competitive with SiC

GaN Systems showcased its GaN solutions at PCIM Europe 2023 in Nuremberg, Germany, demonstrating advances in power density and efficiency across automotive and other markets. Highlights included the new GaN-based 11-kW/800-V On-Board Charger (OBC) reference design, which has up to a 36% higher power density and 15% lower bill-of-materials cost compared to SiC transistor designs, according to the company.

Additional features include an ac-dc stage peak efficiency of greater than 99% and a dc-dc stage peak efficiency of greater than 98.5%. It combines a three-level flying capacitor topology for a bridgeless totem-pole PFC structure and a dual active bridge. The GaN transistors reduce the transistor voltage stress to half.

GaN Systems also showcased additional automotive OBC, dc-dc, and traction implementations; fast-charging GaN chargers and adapters from Samsung, Dell, Harman, Philips, and Razer; a Wi-Fi speaker from Mark Levinson, founder of Daniel Hertz; data-center power supplies from less than 50 to 100 W/in.3; and innovations in e-mobility, LED lighting, and wireless power transfer. CEO Jim Witham was present and explained several items of interest in this video.

Originally published by ElectronicDesign.com