Part NumberGS66508B
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS650 V E-HEMT
IDS30 A
RDS(on)50 mΩ
QG5.8 nC
Dimensions (mm)7.1 x 8.5 x 0.5
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS66508B

650V Enhancement Mode GaN Transistor

The GS66508B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 8.4 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptible Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Appliances
  • Laser Drivers
  • Wireless Power Transfer

Evaluation Boards