| Part Number | GS66502B |
|---|---|
| Downloads | Datasheet Spice Models Step File Allegro Library Altium Library |
| Evaluation Boards | GS665MB-EVB (Mother board) |
| VDS | 650 V E-HEMT |
| IDS | 7.5 A |
| RDS(on) | 200 mΩ |
| QG | 1.6 nC |
| Dimensions (mm) | 5.0 x 6.6 x 0.51 |
| Cooling | Bottom-Side |
| MR QTY | 250 |
| TR QTY | 3000 |
| MR Size | 16 mm x 7″ |
| TR Size | 16 mm x 13″ |
GS66502B
650V Enhancement Mode GaN Transistor
The GS66502B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66502B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V )
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 5.0 x 6.6 mm2 PCB footprint
- RoHS 3 (6+4) compliant
- AC-DC Converters
- Small-Medium UPS
- Appliance Motor Drives
- Single phase inverter legs
- Fast Battery Charging
- Class D Audio amplifiers
- DC-DC converters
EVALUATION BOARD: GS665MB-EVB
650 V Universal Motherboard
This universal motherboard can be used with daughter cards (sold separately) to evaluate the entire GaN Systems 650 V family of GaN E-HEMT products.
COMPATIBLE WITH:
- GS66508B-EVBDB
- GS66508T-EVBDB2
- GS66516T-EVBDB2
