Part NumberGS66502B
DownloadsDatasheet
Spice Models
Step File
Allegro Library
Altium Library
VDS650 V E-HEMT
IDS7.5 A
RDS(on)200 mΩ
QG1.6 nC
Dimensions (mm)5.0 x 6.6 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

Application Notes
REACH Statement
RoHS Certificate of Compliance

GS66502B

650V Enhancement Mode GaN Transistor

The GS66502B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66502B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V )
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 5.0 x 6.6 mm2 PCB footprint
  • RoHS 3 (6+4) compliant

APPLICATIONS

  • AC-DC Converters
  • DC-DC Converters
  • Uninterruptible Power Supplies
  • Industrial Motor Drives
  • Appliance Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Power Adapters
  • Wireless Power Transfer