Part NumberGS-065-030-2-L

Design Note
Spice Models
Step File
Allegro Library
Altium Library

ECAD Model

VDS650 V
RDS(on)50 mΩ
QG6.7 nC
Dimensions (mm)8 x 8 x 0.9


650V Enhancement Mode GaN Transistor

The GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-030-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Bottom-cooled, small 8×8 mm PDFN package
  • RDS(on) = 50 mΩ
  • IDS(max) = 30 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 1 MHz)
  • Fast and controllable fall and rise times
  • Source Sense (SS) pin for optimized gate drive
  • Reverse conduction capability
  • Zero reverse recovery loss
  • RoHS 3 (6+4) compliant


  • Bridgeless Totem Pole PFC
  • Consumer, Industrial and Datacenter High Density Power Supply
  • High Power Adapters
  • LED Lighting Drivers
  • Appliance and Industrial Motor Drives
  • Solar Inverter
  • Uninterruptible Power Supplies
  • Laser Drivers
  • Wireless Power Transfer

Evaluation Board:

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GaN Powered: Revolutionizing Today’s Most Power Demanding Industries

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