GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.
China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…
e2v is now the global provider of GaN Systems’ power transistors for Aerospace and Defense (A&D) applications OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors,…
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LiquidWeb2016-09-09 10:10:182023-06-20 08:11:35PSDcast – Tony Astley of GaN Systems on the future of the GaN marketplace
This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.
[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…
OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems…
Global Semiconductor Alliance award honors GaN Systems for its industry impact. OTTAWA, Ontario, December 14, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over 1,400 executives…
A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon…
由于GaN 晶体三极管被设计出用于充电站，从消费者的观点出发考虑EV充电的方式非常有用。这篇文章由ReVision Energy发表，其中描述了许多使用可再生能源的实际用途方面，这种能源由太阳能板提供用于对电动车进行充电。其中一段视频描绘了Chevy Volt造访充电站。
