GaN Systems Transportation Articles

GaN Systems Extends Market Leadership with Next Generation Automotive-Qualified Transistors

OTTAWA, Ontario, October 20, 2020 – GaN Systems, the global leader in GaN power semiconductors, today announced the release and availability of the first product in a family of new 650V, 60A transistors for the automotive market. The GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+™ testing and…

Article: Analyzing the Advantages of 100V GaN in 48V Applications

This technical article from Lei Kou, Power Electronics Applications Engineer at GaN Systems, and Juncheng (Lucas) Lu, GaN Systems Applications Engineering Manager, appears in full here at EE Power.  This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications. In both consumer electronics and automotive electrification, we are in…

GaN Systems Surpasses Industry’s Toughest Reliability Requirements

Whitepaper outlines approach for rigorous lifetime and reliability testing processes and results which prove GaN Systems’ devices are reliable OTTAWA, Ontario, September 16, 2020 – Are GaN (gallium nitride) power transistors proven and reliable? GaN Systems, the global leader in GaN power semiconductors, today released its whitepaper showing that GaN is reliable, with GaN Systems…

BrightLoop Converters and GaN Systems Collaborate to Bring Disruptive Power Electronics to the Road Track and the Skies

OTTAWA, Canada AND PARIS, France, July 21, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, and BrightLoop Converters, a leading French power electronics company, today announced their strategic partnership to develop the latest AC/DC and DC/DC Converter products for electric motorsport and aerospace applications. Leveraging GaN Systems’ 650V GaN transistors,…

GaN Systems Shows Why GaN is a Game Changer at PCIM 2020

OTTAWA, Ontario, Canada, June 30, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today its participation at “PCIM Europe Digital Days,” taking place July 7–8, 2020. CEO Jim Witham will participate in two panel sessions, “GaN Devices – The Game-Changers” and “Power GaN: Past-Present-Future,” illustrating how GaN power semiconductors…

Article: GaN enables efficient, cost-effective 800V EV traction inverters

This article, written by Juncheng (Lucas) Lu and Peter Di Maso of GaN Systems, was published at EDN.com on May 22, 2020. Go here to read the piece in its entirety.  The number of electric vehicles (EVs) on the road has increased rapidly over the past few years and continues to accelerate. Industry analysts expect 56…

Ready to Get the Most Out of Your GaN Power Designs?

Or curious to learn more about how to incorporate GaN into your next power system design and take advantage of the benefits of higher efficiency and lower size, weight, and total system cost? GaN Systems recently published new materials in our Design Center, a one stop source that aims to help customers make system design…

Article: GaN Growth Seen Exploding on Efficiency Gains

This article was originally published at Power Electronics News on May 12, 2020. Read the rest of the piece here.  GaN (Gallium Nitride) is experiencing surging interests across multiple segments of the electronics industry and gaining widespread acceptance because of efficiency and productivity improvements manufacturers expect from its use. There’s a major shift happening in…

Podcast: Jim Witham on “The All-GaN Vehicle and GaN in the Auto” for PSDcast

GaN Systems CEO Jim Witham joins the Power Systems Design PSDcast for a conversation focused on automotive and what’s next for GaN applications. Listen in here. The All-GaN Vehicle was developed by Nagoya University, with tech from GaN Systems, and it demonstrates the viability of GaN in the automotive space and any applications calling for…

Article: Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic On-State Resistance

This article was published in full in IEEE Transactions on Transportation Electrification. Authors: R. Hou, Y. Shen, H. Zhao, H. Hu, J. Lu and T. Long Abstract: Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless,…