https://gansystems.com/wp-content/uploads/2016/08/GaN-Systems-9-transistors-2015-12-01-scaled.jpg 834 2560 gaN-admin https://gansystems.com/wp-content/uploads/2018/02/gan-systems-logo-fc-340x156.png gaN-admin2016-10-12 13:26:112018-02-07 22:27:02GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A
GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A
GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.
Download App Note GN004 Design considerations of paralleled GaN HEMT.