New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to…
The increasing popularity of GaN solutions in power electronics has prompted many companies to rethink the way they build their power systems. In the last few years, GaN has proven to be reliable and pushing the boundaries in smaller, lighter, and more efficient power systems in data centers, automobiles, consumer electronics, renewable energy systems, and…
GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the winners of the sixth annual “GaN Systems Cup” China Power Supply Society (CPSS) design competition at an awards ceremony at the CPSS Conference on December 21, 2020. The competition challenges top engineering teams from China’s leading universities to design new or…
LEUVEN, BELGIUM – MinDCet, a leading power semiconductor design house, announces the introduction of the next generation GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN Systems GS61008P (E-mode GaN HEMTs). This high-end and high-performance solution is developed to allow power electronics designers to easily design-in GaN for 48V market applications,…
Vancouver, BC and Delft, Netherlands, Dec. 15, 2020 (GLOBE NEWSWIRE) — Chrysalix Venture Capital, a global technology venture capital firm that specializes in transformational industrial innovation, congratulates four of its portfolio companies that have been named on the 2021 Global Cleantech 100 list as the most likely to make a significant market impact over the…
Latest IMS solutions raise the bar with increased output power and efficiency with high-κ IMS3 thermal designs OTTAWA, Ontario, December 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high…
GaN Systems Predictions for 2021: Tipping Point Achieved as GaN Technology Moves from Early Adoption to Mainstream Acceptance OTTAWA, ONTARIO, December 9, 2020: As 2020 comes to a close, we will undoubtedly look back on the past twelve months as a time in which disruption was the hallmark. Amid the unprecedented socioeconomic upheaval brought about…
OTTAWA, Ontario, December 3, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor (OnSemi), a world-leading supplier of power semiconductor ICs. Available now through distribution partners, this high-performance solution is developed for existing and new PCB…
Now in its sixth year, the “GaN Systems Cup” China Power Supply Society Design (CPSS) Competition continues to spur excitement and innovation in the power electronics industry. Fourteen teams have been selected to move on to the final round from the 35 teams that entered the competition in April. The competition finals and awards ceremony…
GaN modules meet industry standard footprints with superior system performance OTTAWA, Ontario, November 17, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced the availability of four new integrated power module evaluation kits: 100V Driver GaN DC/DC Power Stage Module, 650V 150A Half-Bridge IPM, 650V 150A Full-Bridge Module and…
