
GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%
Latest IMS solutions raise the bar with increased output power and efficiency with high-κ IMS3 thermal designs OTTAWA, Ontario, December 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high…