Latest IMS solutions raise the bar with increased output power and efficiency with high-κ IMS3 thermal designs OTTAWA, Ontario, December 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high…
GaN Systems Predictions for 2021: Tipping Point Achieved as GaN Technology Moves from Early Adoption to Mainstream Acceptance OTTAWA, ONTARIO, December 9, 2020: As 2020 comes to a close, we will undoubtedly look back on the past twelve months as a time in which disruption was the hallmark. Amid the unprecedented socioeconomic upheaval brought about…
OTTAWA, Ontario, December 3, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor (OnSemi), a world-leading supplier of power semiconductor ICs. Available now through distribution partners, this high-performance solution is developed for existing and new PCB…
Now in its sixth year, the “GaN Systems Cup” China Power Supply Society Design (CPSS) Competition continues to spur excitement and innovation in the power electronics industry. Fourteen teams have been selected to move on to the final round from the 35 teams that entered the competition in April. The competition finals and awards ceremony…
GaN modules meet industry standard footprints with superior system performance OTTAWA, Ontario, November 17, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced the availability of four new integrated power module evaluation kits: 100V Driver GaN DC/DC Power Stage Module, 650V 150A Half-Bridge IPM, 650V 150A Full-Bridge Module and…
OTTAWA, Ontario, October 20, 2020 – GaN Systems, the global leader in GaN power semiconductors, today announced the release and availability of the first product in a family of new 650V, 60A transistors for the automotive market. The GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+™ testing and…
Whitepaper outlines approach for rigorous lifetime and reliability testing processes and results which prove GaN Systems’ devices are reliable OTTAWA, Ontario, September 16, 2020 – Are GaN (gallium nitride) power transistors proven and reliable? GaN Systems, the global leader in GaN power semiconductors, today released its whitepaper showing that GaN is reliable, with GaN Systems…
Not all Class-D amplifier transistor approaches are the same as latest whitepaper shows comparing various GaN and Silicon devices OTTAWA, Ontario, September 14, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today released its newest whitepaper, “GaN in Class-D Audio: Advantages with GaN Systems – a Comparative Look,” which reviews…
New Reference Design Leads in Size, Thermals, EMI, And Efficiency Performance OTTAWA, Ontario, Canada, August 4, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced a new reference design for a high power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop…
OTTAWA, Ontario, Canada, July 28, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today published the company’s latest technical manual titled, “12V High-Efficiency Audio Reference Designs using GaN Power Transistors.” The technical manual was developed in response to the well-received launch of GaN Systems Class-D audio amplifier evaluation kit in…
