MILPITAS, Calif. – Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems. The new GaN power HEMT, TDG100E90, is now available with a bottom-side cooled package for all applications requiring extremely high reliability, in particular space and military. It joins the recently announced 650V, 60A…
This piece was originally published January 28, 2020, at CUI.com. CUI Inc today announced the addition of two GaN desktop ac-dc power supply series to its SDI product family. The SDI200G-U and SDI200G-UD offer 200 W of continuous power from a compact desktop package. These ac-dc supplies have been designed for a wide range of…
OTTAWA, Ontario, January 20, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that Siemens is integrating part of its Simatic Micro-Drive product line with GaN Systems power semiconductors. With the integration of GaN Systems power transistors, this Siemens product line features industry-leading standards and benefiting customers by power…
OTTAWA, Ontario, Canada, January 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that it has been named a 2020 Global Cleantech 100 company by Cleantech Group. The 2020 Global Cleantech 100 is the 11th edition of the respected annual guide to the leading companies and themes in…
High voltage GaN Power HEMT now shipping in both top- and bottom-side cooled versions This press release was originally featured at BusinessWire here on December 18, 2019. MILPITAS, Calif. — Teledyne e2v HiRel is launching a new, ruggedized 650V/60A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems. The new…
New solution is ideal for high efficiency, ultra-high power density adapter applications for televisions, gaming notebooks and consoles, and industrial and medical devices. OTTAWA, Ontario, Canada AND Phoenix, AZ, December 19, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors and ON Semiconductor, a world-leading supplier of power semiconductor ICs, today…
OTTAWA, Ontario, December 17, 2019 – GaN Systems today announces that SPARX Group “Mirai Creation Fund II (“Mirai fund”)” has made an investment in GaN Systems. Mirai fund provides capital to companies with the goal of accelerating innovation, Vehicle Electrification being one of the major targets, to generate a “new power” that will shape the…
OTTAWA, Ontario, Canada, December 10, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that it will be showcasing at Consumer Electronics Show (CES) the most recent technology innovations addressing smaller size, higher functionality, autonomy and cost saving solutions for power adapters, robots, drones, handheld electronics and electric vehicles.…
GaN Systems Looks Ahead to 2020 Game-Changing Technologies Associated With Power Electronics OTTAWA, ONTARIO, December 9, 2019 – For the past several decades, the subject of ‘power’ has been consistently viewed as a challenge focused primarily on the incremental improvement – be that by technology, by government regulations, or by shifting consumer behavior. Much attention has…
OTTAWA, Ontario, November 5, 2019 – GaN Systems, the global leader in GaN power semiconductors, today announced that the company received International Organization for Standardization (ISO) 9001:2015 certification for the design and manufacture of power semiconductor products. Both GaN Systems’ Canadian headquarters and Taiwanese operations facilities received ISO certification from the British Standards Institute (BSI),…
