MILPITAS, Calif.–(BUSINESS WIRE)–Teledyne e2v HiRel Electronics, a business unit of the Teledyne Defense Electronics Group, today introduced a new 650V GaN FET device that is dedicated to demanding HiRel applications. This 650V FET is the highest voltage GaN FET device currently in use in the market. The TDG650E60 is a 650V/60A enhancement mode power transistor. It is built…
Company to present poster sessions and display its latest products that highlight real world benefits and applications in power-driven industries OTTAWA, Ontario, Canada, September 13, 2018 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors today announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018, the world’s…
Delivering a “world without cords” will become a reality Danville, California and Ottawa, Ontario, Canada, August 15, 2018 – PowerSphyr, and an innovator in wireless charging, and GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems to market for high powered…
OTTAWA, Ontario, Canada, July 26, 2018 – GaN Systems, the global leader in GaN power semiconductors today released ‘The Mobility (R)Evolution,’ a three-part online video series that explores the ways new technologies for electrification and autonomous driving are enabling the auto industry to evolve rapidly into a sustainable mobility ecosystem. The first installment of the series…
Nuremberg, Germany, PCIM Europe (Power Conversion and Intelligent Motion), June 5, 2018 – GaN Systems, the global leader in GaN power semiconductors, today unveiled two wireless power amplifiers that will revolutionize the wireless charging market for high-power consumer, industrial, and transport applications. These new solutions include the 100 W power amplifier with ranges from 70 W…
KYOTO, Japan and OTTAWA, Canada, June 5, 2018 – ROHM, a leading supplier of power semiconductors, and GaN Systems, the global leader in GaN power semiconductors, today announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages GaN…
OTTAWA, Ontario, Canada, May 4, 2018– In support of worldwide innovation in the power electronics industry, GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, is once again sponsoring the distinguished China Power Supply Society (CPSS) design competition, which is currently underway with many top engineering teams participating from leading universities throughout China.…
GaN is rising to the challenge of increasing global demand for wireless charging solutions for high power systems. As you might have seen, GaN Systems and NuCurrent recently announced a joint partnership highlighting the launch of NuCurrent’s 150-watt wireless power solution, which is designed for industrial and consumer applications, using our high power, high efficiency…
CHICAGO (PRWEB) APRIL 12, 2018– NuCurrent, an industry leader in wireless power systems and technology development, announces the development of 150-watt wireless power solutions designed for industrial and consumer applications with high power needs. This development, in partnership with GaN Systems, the leader in GaN power transistors, builds upon NuCurrent’s achievements in wireless power and…
San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 6, 2018 – GaN Systems, the global leader in GaN power semiconductors, today announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices. This is 10X the 1,000-hour requirement to meet JEDEC qualification. As the power electronics industry increases adoption…
