KYOTO, Japan and OTTAWA, Canada, June 5, 2018 – ROHM, a leading supplier of power semiconductors, and GaN Systems, the global leader in GaN power semiconductors, today announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages GaN…
OTTAWA, Ontario, Canada, May 4, 2018– In support of worldwide innovation in the power electronics industry, GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, is once again sponsoring the distinguished China Power Supply Society (CPSS) design competition, which is currently underway with many top engineering teams participating from leading universities throughout China.…
GaN is rising to the challenge of increasing global demand for wireless charging solutions for high power systems. As you might have seen, GaN Systems and NuCurrent recently announced a joint partnership highlighting the launch of NuCurrent’s 150-watt wireless power solution, which is designed for industrial and consumer applications, using our high power, high efficiency…
CHICAGO (PRWEB) APRIL 12, 2018– NuCurrent, an industry leader in wireless power systems and technology development, announces the development of 150-watt wireless power solutions designed for industrial and consumer applications with high power needs. This development, in partnership with GaN Systems, the leader in GaN power transistors, builds upon NuCurrent’s achievements in wireless power and…
San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 6, 2018 – GaN Systems, the global leader in GaN power semiconductors, today announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices. This is 10X the 1,000-hour requirement to meet JEDEC qualification. As the power electronics industry increases adoption…
San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 5, 2018 – GaN Systems, the global leader in GaN power semiconductors, today unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of…
OTTAWA, Ontario, Canada, February 28, 2018 – GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages…
OTTAWA, Ontario, Canada, February 27, 2018– GaN Systems, the global leader in GaN power semiconductors, today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistor and pSemi’s PE29101 integrated high-speed driver. The outputs of the pSemi driver can provide switching transition speeds in the sub nano-second…
OTTAWA, Ontario, February 22, 2018 – GaN Systems, the global leader in GaN power semiconductors, announced today that Dr. Stefan Heck, the Chief Executive Officer and Founder of Nauto, has been appointed to the company’s board of directors. “We are delighted to welcome Stefan to our board. He joins us with an impressive set of…
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Kris Kiser2018-02-15 08:38:382018-04-26 19:04:41Power Electronics Industry To Demonstrate How GaN Has Transformed Their Products At APEC 2018