GaN Systems Data Center Articles

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GaN Systems Launches Comprehensive Evaluation Platform for GaN Transistors

Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design OTTAWA, Ontario, November 4, 2016 – GaN Systems launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB).…

CE+T Power - The Little Box Challenge Adventure

CE+T Power – The Little Box Challenge Adventure

In this video the CE+T team describes the challenges they confronted and how they used GaN Systems transistors to develop the inverter that won Google and IEEE Little Box Challenge.

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On Display at electronica 2016 – New Power Systems Exhibit Dramatic Performance Improvements Due to GaN Systems’ Transistors

Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…

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New tools for driving GaN E-HEMT transistors

[UPDATE: This product has been selected an EDN Top 100 Product of 2016! The article originally appeared in EDN Tools & Learning as a Product Review.] The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required. Government regulations and increasingly stringent emissions standards compound the need…

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GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A

GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.

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24th China Power Supply Society Advanced Technical Training Workshop Features GaN Systems’ Transistors

China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…

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e2v and GaN Systems Global Alliance Extends the Power of GaN to Aerospace & Defense Industries

e2v is now the global provider of GaN Systems’ power transistors for Aerospace and Defense (A&D) applications   OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors,…

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How to Design Power Electronics: HF Power Semiconductor Modeling Webcast

This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.  

Wow factor

The Wow! factor is alive and well

[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…