GaN Systems Data Center Articles

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GaN Customer Solutions to Take Center Stage at APEC 2017

Image: GaN Systems’ 99% efficient, 3 kW PFC reference design will be among the products, systems and demonstrations on display at APEC 2017. GaN Systems to demonstrate wireless power transfer and a broad range of commercial power systems OTTAWA, Ontario, March 16, 2017 – At the upcoming 2017 Applied Power Electronics Conference and Exposition (APEC…

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Thermal Models of GaN Systems’ Industry-leading GaN Transistors Now on the Web

GaN transistor thermal RC models enhance the accuracy of power system SPICE simulations OTTAWA, Ontario, February 3, 2017 – GaN Systems has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using GaN…

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Gallium Nitride is Moving Forward

The following article was written by Achim Scharf and published in the November 2016 issue of Power Electronics Europe. According to market researcher Yole 2015 – 2016 have been exciting years for the GaN power business – 600V GaN is today commercially available, after many ups and downs. And GaN power ICs have debuted, opening…

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GaN Transistors Unleash Wireless Power Transfer (WPT)

In this episode of PSDtv, originally recorded by Alix Paultre,  CEO Jim Witham takes us through GaN Systems’ booth at electronica 2016, held in Munich, Germany this past November. Mr. Witham describes our latest advances and shows examples of how customers are using our latest GaN transistor products in their power systems. Watch on YouTube…

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Improving Power Density and Efficiency in 48V Communications DC-DC Converters utilizing GaN Transistors

This article was originally published in EDN Magazine. by Di Chen, Applications Engineering Manager, GaN Systems Jason Xu, Applications Engineer, GaN Systems Background As the world’s demand for data increases seemingly out of control, a real problem occurs in the data communications systems that have to handle this traffic. Datacenters and base stations, filled with…


GaN Systems Launches Comprehensive Evaluation Platform for GaN Transistors

Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design OTTAWA, Ontario, November 4, 2016 – GaN Systems launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB).…

CE+T Power - The Little Box Challenge Adventure

CE+T Power – The Little Box Challenge Adventure

In this video the CE+T team describes the challenges they confronted and how they used GaN Systems transistors to develop the inverter that won Google and IEEE Little Box Challenge.

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On Display at electronica 2016 – New Power Systems Exhibit Dramatic Performance Improvements Due to GaN Systems’ Transistors

Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…

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New tools for driving GaN E-HEMT transistors

[UPDATE: This product has been selected an EDN Top 100 Product of 2016! The article originally appeared in EDN Tools & Learning as a Product Review.] The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required. Government regulations and increasingly stringent emissions standards compound the need…

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GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A

GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.