Archives: Evaluation Boards And Reference Designs

The evaluation boards listed here have been replaced with newer versions. View current list of evaluation boards >

DescriptionEvaluation Unit
650 V GaN E-HEMT Daughter board 2 kWGS66508T-EVBDB2
650 V GaN E-HEMT Daughter board 2.5 kWGS66516T-EVBDB2
650 V GaN E-HEMT Daughter Board 750 WGS66504B-EVBCB
650 V GaN E-HEMT Daughter Board 1.5 kWGS66508B-EVBDB1
Audio Class D 2-channel 200W per channel amplifier and 400W SMPS evaluation boardsGS-EVB-AUD-BUNDLE1-GS
Non-isloated Half Bridge Driver, 30A 50mΩ GaN evaluation board – ONSemiGS-EVB-HB-66508B-ON1
OCP Half Bridge Driver, 30A 50mΩ GaN, reference design – RenesasGS-EVB-HB-66508B-RN
100V, GaN E-HEMT Buck Converter with High Frequency GaN DriverGS61008P-EVBHF
High power motherboard, user-configurable into any of 12 different topologiesGSP65MB-EVB
— Companion Half Bridge on IMS with driver; 650 V, 25 mΩ, 2-4 kWGSP65R25HB-EVB
Optocoupler Driver Half Bridge, 60A 25mΩ GaN, daughter board – BroadcomGS66516T-EVBDB2
OCP Half Bridge Driver, 60A 25mΩ GaN, daughter board – RenesasGS-EVB-HB-66516T-RN
300W AC/DC Adapter PFC/LLC evaluation boardGS-EVB-ACDC-300W-ON
100 V Open Loop Buck/Boost evaluation board with Driver GaN Power StageGS-EVB-DRG-100V7R-GS2
100 V Driver GaN – Integrated 7mΩ DC/DC Power StageGS-EVM-DRG-100V7R-GS2
Ultra High Power Density AC/DC Evaluation BoardGS-EVB-ACDC-300W-ON
Non-isloated Half Bridge Driver, 90A 7mΩ GaN evaluation board – ONSemiGS-EVB-HB-61008P-ON
Isolated Half Bridge Bipolar Driver – 60A 25mΩ GaN evaluation board – Allegro MicrosystemsGS-EVB-HB-0650603B-HD
Half Bridge on IMS with driver; 650 V, 13 mΩ, 4-7 kWGSP65R13HB-EVB
Low power Half Bridge or Full Bridge, non-isolated driver motherboardGS-EVB-IMS2-LPMB
— Companion Half Bridge on IMS; 650 V, 150 mΩ, 150 W (2x for Full BridgeGS-EVB-IMS2-065011L-GS
— Companion Half Bridge on IMS; 650 V, 100 mΩ, 250 W (2x for Full Bridge) GS-EVB-IMS2-66504B-GS
High power Full Bridge isolated driver boards GSP665HPMB-EVBIMS2
— Companion Half Bridge on IMS, 3 W/mK conductivity; 650 V, 50 mΩ, 1-3 kW (2x for FB)GSP66508HB-EVBIMS2
— Companion Half Bridge on IMS, 7 W/mK conductivity; 650 V, 25 mΩ, 3-6 kW (2x for FB)GS-EVB-IMS3-0650603B-GS