Part NumberGS66508B-EVBDB1
DownloadsUser Manual
Schematic Diagram
Gerber Design Files



650 V GaN E-HEMT Daughter Board: Revision 1

*Requires a motherboard (GS665MB-EVB)

The GS66508B-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design.

  • Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation
  • Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN
  • E-HEMT in traditional through-hole type power supply board
  • Current shunt position for switching characterization testing
  • Universal form factor and footprint for all products
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