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100V High-Speed GaN Half-Bridge

The GS-EVB-HB-61008P-ON evaluation board consists of NCP51810 gate drive solution with two GS61008P GaN E-mode transistors in a fully-functional half bridge. It allows users to easily evaluate GaN in a robust and simplified layout with NCP51810 gate driver, for a high cost-effective solution. This evaluation board provides the utmost flexibility of GaN transistors and driver combination and can be used in any topology that requires the use of a high−side/low−side FETs.


  • Supports 48 V input design with sufficient safety margin and high performance
  • Robust design for high frequency operation
  • Simplified design, optimized for driving GaN transistors
  • Fast propagation delay of 50 ns max
  • Increased efficiency and allow paralleling
  • Allows control of rise and fall time for EMI tuning
  • Offers configurable dead−time control and driver enable/disable functions


  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Non-isolated step-down / up converters
  • Data center 48 V to low voltage intermediate bus converter
  • 48 V to PoL converter
  • Industrial power module

Created in partnership with ON Semiconductor, Featuring NCP1810, the 200V high-speed half-bridge GaN gate driver.

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