eGaN vs. Silicon
This Power Systems Design article authored by EPC’s Drs. Glaser and Reusch compares dead-time losses for eGaN FETs and silicon MOSFETs in synchronous rectifiers. The benefits of GaN over silicon are detailed. Read the article.
GaN Systems Transportation Articles
Powering Up the New Stop-Start Systems
This article written by Terry Costlow and published by SAE describes the status of a range of technologies used to manage the aggressive start cycles, including lithium ion batteries, ultracapacitors, and 48-V “mild hybrid” systems. Read the article.
Capacity and Market Trends for Energy Storage Systems
This brief article published by Green Energy Storage projects the total MW capacity for battery energy storage systems by application type. Market revenue projections are made by year through 2023. G-Philos’ 700W GaN-based ESS is 30% smaller, and consumes 25% less power than their silicon version
GaN Systems Announces 10X Production Increase at TSMC
OTTAWA, Ontario, December 1, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, announces that its foundry, Taiwan Semiconductor Manufacturing Corporation (TMSC), has expanded the high volume production of products based on GaN System’s proprietary Island Technology® by 10X in response to surging global demand from consumer and enterprise customers. GaN Systems…
EGTRONICS 48V, 12 kW Inverter
Hey, Teschler, EGTRONICS Shrunk the Inverter! GaN transistors are here, they’re now and they’re proliferating in production designs. As just one example, in this video which was filmed at APEC 2016, GaN Systems’ President, Girvan Patterson, describes to Design World / EEWorld’s Lee Teschler the impact that GaN transistors have had on EGTRONICS’ production model…
HELLA, GaN Systems and Kettering University Deliver Industry-Leading Electric Vehicle Charger
Unprecedented 2.6 kW/l, >97% efficient, ultra-compact, lighter EV charger made with GaN transistors OTTAWA, Ontario – Automotive electronics specialist HELLA, in collaboration with GaN Systems, the leading manufacturer of gallium nitride power transistors, and charging technology researchers at Kettering University’s Advanced Power Electronics Lab, have developed a Level-2 electric vehicle (EV) charger prototype with efficiencies…
Richardson RFPD Announces Agreement with GaN Systems
Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range…
Imperial College London Wins GaN Systems Geoff Haynes Future Power Challenge
GaN Systems teams with the UK EPSRC Power Electronics Centre to accelerate the use of high speed GaN transistors in future power conversion or control applications Nottingham, England – At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial College London received the…
Comparison of Silicon and GaN Transistors Leads to an Optimized Inverter Design
By re-designing IGBT and MOSFET solutions with GaN-based FETs, DRS optimized vehicle inverter performance, increased switching frequency by a factor of four, reduced size and weight, while achieving 98.5% efficiency. By Scott Ramsay, Technical Director, DRS – Consolidated Controls, Inc. At DRS, we set a goal to design an improved generation of our 2kVI vehicle…
Integration or Optimization…Which Comes First?
At APEC 2016 it became abundantly clear to the industry that GaN transistors are here, they’re now, and they’re proliferating. GaN Systems, EPC, Transphorm, Panasonic, Infineon, Texas Instruments, and other manufacturers and developers all displayed GaN products in varying readiness, from existing only on PowerPoint slides to actual customer production units. It’s been fascinating to watch…
