This Power Systems Design article authored by EPC’s Drs. Glaser and Reusch compares dead-time losses for eGaN FETs and silicon MOSFETs in synchronous rectifiers. The benefits of GaN over silicon are detailed.
This Power Systems Design article authored by EPC’s Drs. Glaser and Reusch compares dead-time losses for eGaN FETs and silicon MOSFETs in synchronous rectifiers. The benefits of GaN over silicon are detailed.