GaN Systems Transportation Articles

FUTURE CAR 2017 – Key Takeaways: GaN in Automotive – Progress and Prospects by Julian Styles

Recently, I had the opportunity to attend FUTURECAR 2017 at Georgia Institute of Technology (“Georgia Tech”). This annual workshop, held by Georgia Tech and Semi, addresses the rapid evolution of automotive technology and electronics, and brings together global leaders in automotive manufacturing across the entire supply chain, design, R&D, and academia. At the conference, we…

DELTA JOINS BMW i VENTURES AS STRATEGIC INVESTOR IN GAN SYSTEMS

OTTAWA, Ontario, December 11, 2017 – GaN Systems, the global leader in GaN power semiconductors, has announced that Delta, the worldwide leader in power systems, has joined BMW i Ventures in participation of a strategic investment in GaN Systems. GaN Systems plans to use the funding to expand global sales and accelerate product innovation to…

The Top 2018 Trends Impacting the World’s Power and Energy Footprint – Challenges Will Be Met by A Wave of Power Systems Designed to Be Lighter, Smaller, and More Efficient

OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors,…

“It Ain’t So Hard…” by Larry Spaziani

GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…

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Global Leaders Collaborate on GaN Technology

OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these challenges, GaN Systems, the world’s leading provider of gallium nitride (GaN) power transistors,…

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Gallium Nitride Sets Innovation Bars Higher

The following article, written by Mathew Dirjish, originally appeared in Sensors Online. Silicon has been the mainstay of semiconductor fabrication for as long as one can remember. It is the meat of transistors, OP amps, microprocessors, MCUs, PLCs, and numerous other devices. The material has proven more than viable and reliable and will be with…

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Ottawa tech firm GaN Systems revved up about BMW investment

This article, written by David Sali, was originally published in the Aug. 25th issue of the Ottawa Business Journal. Kanata company’s next-generation semiconductor technology attracts multimillion-dollar injection of equity led by German automaker A Kanata firm that makes transistors that help electric and autonomous vehicles run more efficiently has landed millions in funding from one…

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Newly Enhanced LTSpice Model Simplifies Designing with GaN

Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires…

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BMW i Ventures Leads Strategic Investment in GaN Systems

Mountain View – July 18, 2017 – GaN Systems, the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes that GaN Systems’ products maximize the efficiency of electronic systems while dramatically reducing size,…

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A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article was originally published in the June 2017 issue of Bodo’s Power Systems. Research on wide bandgap (WBG) devices has been conducted for many years. The reason that the properties of Gallium Nitride (GaN) and Silicon Carbide (SiC) excite power engineers is because they show substantial performance improvements over their silicon-based counterparts. By Jason…