https://gansystems.com/wp-content/uploads/2016/08/video3.jpg113200LiquidWebhttps://gansystems.com/wp-content/uploads/2024/03/infineon-formerly-gan-fc-2.pngLiquidWeb2016-09-09 10:10:182023-06-20 08:11:35PSDcast – Tony Astley of GaN Systems on the future of the GaN marketplace
This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.
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[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…
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OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems…
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Global Semiconductor Alliance award honors GaN Systems for its industry impact. OTTAWA, Ontario, December 14, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over 1,400 executives…
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A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon…
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This Power Systems Design article authored by EPC’s Drs. Glaser and Reusch compares dead-time losses for eGaN FETs and silicon MOSFETs in synchronous rectifiers. The benefits of GaN over silicon are detailed. Read the article.
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This article written by Terry Costlow and published by SAE describes the status of a range of technologies used to manage the aggressive start cycles, including lithium ion batteries, ultracapacitors, and 48-V “mild hybrid” systems. Read the article.
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This brief article published by Green Energy Storage projects the total MW capacity for battery energy storage systems by application type. Market revenue projections are made by year through 2023. G-Philos’ 700W GaN-based ESS is 30% smaller, and consumes 25% less power than their silicon version
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LiquidWeb2016-09-09 10:10:182023-06-20 08:11:35PSDcast – Tony Astley of GaN Systems on the future of the GaN marketplace
