New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to…
This technical article from Lei Kou, Power Electronics Applications Engineer at GaN Systems, and Juncheng (Lucas) Lu, GaN Systems Applications Engineering Manager, appears in full here at EE Power. This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications. In both consumer electronics and automotive electrification, we are in…
Whitepaper outlines approach for rigorous lifetime and reliability testing processes and results which prove GaN Systems’ devices are reliable OTTAWA, Ontario, September 16, 2020 – Are GaN (gallium nitride) power transistors proven and reliable? GaN Systems, the global leader in GaN power semiconductors, today released its whitepaper showing that GaN is reliable, with GaN Systems…
OTTAWA, Ontario, February 25, 2020 – GaN Systems, the global leader in GaN power semiconductors, will showcase how its leading GaN transistors are a cornerstone technology for power electronics equipment. New transistor products and power modules, reference designs and tools, and customer demonstrations in consumer electronics, industrial, and automotive industries will be on display at…
High voltage GaN Power HEMT now shipping in both top- and bottom-side cooled versions This press release was originally featured at BusinessWire here on December 18, 2019. MILPITAS, Calif. — Teledyne e2v HiRel is launching a new, ruggedized 650V/60A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems. The new…
The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands OTTAWA, Ontario, Canada, March 6, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced the industry’s highest current 650 V GaN E-HEMTs with the addition…
Jim Witham, GaN Systems’ CEO, appeared on Bloomberg BNN’s Power Shift to discuss how using gallium nitride (GaN) can help increase the energy efficiency of electronic systems. Click here to view this video on Bloomberg BNN Power Shift’s website
An Explosion In Data-Intensive Technologies Such As IoT, AI, Machine Learning, and Blockchain Will Mean Significant New Pressures To Meet Escalating Demand For More Power 点击查看简体中文版 OTTAWA, ONTARIO, December 12, 2018: For the past several decades, the topic of ‘power’ has been consistently viewed as a challenge focused primarily on incremental improvement in making devices…
This article was originally published in Radio-Electronics.com on September 16, 2018 by Rudy Ramos at Mouser Electronics. The electronics industry has a major role to play in helping to save energy, by enabling better equipment and new ways of working and living that that are more efficient and environmentally friendly. Maintaining the pace of…
A lot of engineers don’t have a good feel for how gallium-nitride FETs perform compared to silicon-carbide equivalents. So GaN Systems devised two 650-V, 15-A switching supplies using SiC and GaN to see how they compared. In an interview conducted by WTWH Media’s Lee Teschler, Jim Witham explains the differences that emerged in this head-to-head…
