GaN Systems Space & Hi Rel Articles

Article: “GaN’s Ground-Floor Opportunity”

This article was originally published in Radio-Electronics.com on September 16, 2018 by Rudy Ramos at Mouser Electronics.    The electronics industry has a major role to play in helping to save energy, by enabling better equipment and new ways of working and living that that are more efficient and environmentally friendly. Maintaining the pace of…

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SiC vs GaN Head-to-Head Performance Comparison

A lot of engineers don’t have a good feel for how gallium-nitride FETs perform compared to silicon-carbide equivalents. So GaN Systems devised two 650-V, 15-A switching supplies using SiC and GaN to see how they compared. In an interview conducted by WTWH Media’s Lee Teschler, Jim Witham explains the differences that emerged in this head-to-head…

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Global Leaders Collaborate on GaN Technology

OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these challenges, GaN Systems, the world’s leading provider of gallium nitride (GaN) power transistors,…

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Gallium Nitride Sets Innovation Bars Higher

The following article, written by Mathew Dirjish, originally appeared in Sensors Online. Silicon has been the mainstay of semiconductor fabrication for as long as one can remember. It is the meat of transistors, OP amps, microprocessors, MCUs, PLCs, and numerous other devices. The material has proven more than viable and reliable and will be with…

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Ottawa tech firm GaN Systems revved up about BMW investment

This article, written by David Sali, was originally published in the Aug. 25th issue of the Ottawa Business Journal. Kanata company’s next-generation semiconductor technology attracts multimillion-dollar injection of equity led by German automaker A Kanata firm that makes transistors that help electric and autonomous vehicles run more efficiently has landed millions in funding from one…

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Newly Enhanced LTSpice Model Simplifies Designing with GaN

Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires…

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BMW i Ventures Leads Strategic Investment in GaN Systems

Mountain View – July 18, 2017 – GaN Systems, the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes that GaN Systems’ products maximize the efficiency of electronic systems while dramatically reducing size,…

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A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article was originally published in the June 2017 issue of Bodo’s Power Systems. Research on wide bandgap (WBG) devices has been conducted for many years. The reason that the properties of Gallium Nitride (GaN) and Silicon Carbide (SiC) excite power engineers is because they show substantial performance improvements over their silicon-based counterparts. By Jason…

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Customer Products on Display at PCIM 2017

This video, originally published on Electronics Products Magazine’s YouTube channel, was recorded at PCIM 2017. GaN Systems’ CEO, Jim Witham, talks with Alix Paultre about the adoption of GaN technology and describes some of the 30+ customer products displayed at PCIM that are performance-optimized by GaN transistors. Watch on YouTube >

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Paralleled GaN Transistors Boost Converter Power Up to 100kW

This article was written by Sam Davis and first appeared in powerelectronics.com. Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. Characteristics…