High voltage GaN Power HEMT now shipping in both top- and bottom-side cooled versions This press release was originally featured at BusinessWire here on December 18, 2019. MILPITAS, Calif. — Teledyne e2v HiRel is launching a new, ruggedized 650V/60A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems. The new…
The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands OTTAWA, Ontario, Canada, March 6, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced the industry’s highest current 650 V GaN E-HEMTs with the addition…
Jim Witham, GaN Systems’ CEO, appeared on Bloomberg BNN’s Power Shift to discuss how using gallium nitride (GaN) can help increase the energy efficiency of electronic systems. Click here to view this video on Bloomberg BNN Power Shift’s website
An Explosion In Data-Intensive Technologies Such As IoT, AI, Machine Learning, and Blockchain Will Mean Significant New Pressures To Meet Escalating Demand For More Power 点击查看简体中文版 OTTAWA, ONTARIO, December 12, 2018: For the past several decades, the topic of ‘power’ has been consistently viewed as a challenge focused primarily on incremental improvement in making devices…
This article was originally published in Radio-Electronics.com on September 16, 2018 by Rudy Ramos at Mouser Electronics. The electronics industry has a major role to play in helping to save energy, by enabling better equipment and new ways of working and living that that are more efficient and environmentally friendly. Maintaining the pace of…
A lot of engineers don’t have a good feel for how gallium-nitride FETs perform compared to silicon-carbide equivalents. So GaN Systems devised two 650-V, 15-A switching supplies using SiC and GaN to see how they compared. In an interview conducted by WTWH Media’s Lee Teschler, Jim Witham explains the differences that emerged in this head-to-head…
OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these challenges, GaN Systems, the world’s leading provider of gallium nitride (GaN) power transistors,…
The following article, written by Mathew Dirjish, originally appeared in Sensors Online. Silicon has been the mainstay of semiconductor fabrication for as long as one can remember. It is the meat of transistors, OP amps, microprocessors, MCUs, PLCs, and numerous other devices. The material has proven more than viable and reliable and will be with…
This article, written by David Sali, was originally published in the Aug. 25th issue of the Ottawa Business Journal. Kanata company’s next-generation semiconductor technology attracts multimillion-dollar injection of equity led by German automaker A Kanata firm that makes transistors that help electric and autonomous vehicles run more efficiently has landed millions in funding from one…
Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires…
