GaN Systems Space & Hi Rel Articles

Heyday IC

Unique Driver Architecture Enhances GaN-Based Isolated Power-Supply Designs

by CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power…

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How to Design Power Electronics: HF Power Semiconductor Modeling Webcast

This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits. Register to watch the webinar.

Wow factor

The Wow! factor is alive and well

[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…

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A Novel Power Inverter Design Using GaN Transistors Produces a Power Density of 61.2 W/in3

[Original article published by Power Systems Design Magazine is available here on page 23.] Details of Virginia Tech’s design that won 3rd place in Google’s Little Box Challenge By Xianan Zhao, Lanhua Zhang and Rachael Born Virginia Tech Summary In response to Google’s Little Box Challenge (LBC), our Virginia Tech team, the Future Energy Electronics…

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GaN Systems’ Founders Girvan Patterson and John Roberts Retire

OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems…

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GaN Systems Wins Coveted 2015 Global Semiconductor Award

Global Semiconductor Alliance award honors GaN Systems for its industry impact. OTTAWA, Ontario, December 14, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over 1,400 executives…

Pi Innovo

Pi Innovo and GaN Systems Collaborate to Exploit the Advantages of Gallium Nitride Semiconductors

A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon…

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电动汽车的充电

由于GaN 晶体三极管被设计出用于充电站,从消费者的观点出发考虑EV充电的方式非常有用。这篇文章由ReVision Energy发表,其中描述了许多使用可再生能源的实际用途方面,这种能源由太阳能板提供用于对电动车进行充电。其中一段视频描绘了Chevy Volt造访充电站。

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eGaN vs. Silicon

This Power Systems Design article authored by EPC’s Drs. Glaser and Reusch compares dead-time losses for eGaN FETs and silicon MOSFETs in synchronous rectifiers. The benefits of GaN over silicon are detailed. Read the article.