Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…
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Address to showcase GaN’s unique value in the Automotive market OTTAWA, Ontario, October 27, 2016 – GaN Systems is pleased to announce that co-founder and Chief Technology Officer John Roberts will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide Bandgap Power Devices and Applications (WiPDA). The presentation, entitled GaN…
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China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…
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e2v is now the global provider of GaN Systems’ power transistors for Aerospace and Defense (A&D) applications OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors,…
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OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems…
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Global Semiconductor Alliance award honors GaN Systems for its industry impact. OTTAWA, Ontario, December 14, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over 1,400 executives…
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A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon…
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OTTAWA, Ontario, December 1, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, announces that its foundry, Taiwan Semiconductor Manufacturing Corporation (TMSC), has expanded the high volume production of products based on GaN System’s proprietary Island Technology® by 10X in response to surging global demand from consumer and enterprise customers. GaN Systems…
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Unprecedented 2.6 kW/l, >97% efficient, ultra-compact, lighter EV charger made with GaN transistors OTTAWA, Ontario – Automotive electronics specialist HELLA, in collaboration with GaN Systems, the leading manufacturer of gallium nitride power transistors, and charging technology researchers at Kettering University’s Advanced Power Electronics Lab, have developed a Level-2 electric vehicle (EV) charger prototype with efficiencies…
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Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range…
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