GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…
OTTAWA, ONTARIO, December 1, 2017 – Winners from the annual China Power Supply Association (CPSS) competition were honored at the organization’s annual meeting on November 22, 2017 by sponsor GaN Systems, the global leader of GaN (gallium nitride) power semiconductors, alongside CPSS, China Power Society Science Popularization Committee, and Nanjing University of Aeronautics and Astronautics.…
Recently, I attended WiPDA 2017 in Santa Ana Pueblo, New Mexico and participated in a panel discussion, Commercialization of GaN Devices in High-Frequency Power Electronic Applications. Consisting of thought leaders and pioneers in GaN devices from GaN Systems, TI, EPC, and others, we had a charged discussion on our industry’s key opportunities. These topics included…
GaN power transistors are changing the world and building a reputation as a technology that is enabling high performance, high efficiency, and lower cost power systems. They save millions of watts of power, enable new technologies, and enhance the quality of life – from improving the quality of air we breathe by lowering CO2 emissions…
Audio Speakers, lasers, and DC-DC wireless chargers hit record performance with GaN OTTAWA, Ontario – October 19, 2017 – From Beethoven to Beyoncé and from the Allman Brothers to ZZ Top, your music sounds better with higher highs, lower lows, and less harmonic distortion. From heavy-duty industrial cutting lasers to delicate, precise medical lasers, the…
OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these challenges, GaN Systems, the world’s leading provider of gallium nitride (GaN) power transistors,…
Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires…
Mountain View – July 18, 2017 – GaN Systems, the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes that GaN Systems’ products maximize the efficiency of electronic systems while dramatically reducing size,…
The above photo was provided by 3NERGY. From 70 W to 70 kW, customers continue to make giant steps in size reduction OTTAWA, Ontario, May 10, 2017 – Everybody knows GaN can increase efficiency and reduce size. However, seeing is believing. By replacing legacy MOSFETs with gallium nitride (GaN) transistors, GaN Systems’ customers improve system…
GaN Systems releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design OTTAWA, Ontario, May 9, 2017 – Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the diodes…
