The above photo was provided by 3NERGY. From 70 W to 70 kW, customers continue to make giant steps in size reduction OTTAWA, Ontario, May 10, 2017 – Everybody knows GaN can increase efficiency and reduce size. However, seeing is believing. By replacing legacy MOSFETs with gallium nitride (GaN) transistors, GaN Systems’ customers improve system…
GaN Systems releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design OTTAWA, Ontario, May 9, 2017 – Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the diodes…
This article, authored by contributing editor Peter Delly-Detwiler, was originally published in Forbes.com. I recently had an opportunity to speak with Blake Richetta, Vice President of Sales for sonnen – the residential energy storage company that began focusing on U.S. markets in 2015. Richetta, who was briefly Tesla’s North American Powerwall sales manager, has an…
This article, based on an interview with GaN Systems’ CEO, Jim Witham, was originally authored by Paul O’Shea and published in powerelectronicsnews.com. As author Jeremey Rifkin put it, we are in the midst of the 3rd industrial revolution. The first was the mechanization of the textile industry, followed by the age of mass production where…
GaN transistors maximize FlexGrid inverter’s power efficiency while minimizing size and weight OTTAWA, Ontario, April 26, 2017 – GaN Systems’ gallium nitride (GaN) transistors are being used by power inverter design engineers to increase power efficiency, and to reduce inverter size and weight. These performance advantages have compelled SolPad™, designer of state-of-the-art sustainable personalized energy…
GaN Systems sponsors inverter design competition OTTAWA, Ontario, April 24, 2017 – Choosing GaN instead of legacy silicon transistors allows power systems designers to increase both system efficiency and power density while reducing system size, weight and cost. Nowhere is this trend more apparent than in the energy market where GaN transistors are replacing MOSFETs…
The G-Philos 700W GaN-based ESS is 30% smaller and consumes 25% less power than their silicon version. 10 W to 50 kW applications leverage GaN for increased efficiency and reduced overall size OTTAWA, Ontario, March 20, 2017 – The demand for more power in electronics continues to increase, while the space allowable for power continues…
Image: A 250 W wireless power transmitting device running at 6.78 and 13.56 MHz, enabled by GaN Systems’ GaN transistors; Courtesy of the Imperial College London High-frequency resonant design enables applications missing the key ingredient of high power transfer OTTAWA, Ontario, March 17, 2017 – The demand for high power wireless transfer is surging at…
GaN Systems to demonstrate wireless power transfer and a broad range of commercial power modules OTTAWA, Ontario, March 13, 2017 – At the 2017 Electronica Shanghai Exposition in Shanghai, China, visitors will see state-of-the-art gallium nitride (GaN) transistors in action. From March 14-16, in Booth #E4.4212, GaN Systems will conduct live demonstrations of commercial systems…
Image: GaN Systems’ 99% efficient, 3 kW PFC reference design will be among the products, systems and demonstrations on display at APEC 2017. GaN Systems to demonstrate wireless power transfer and a broad range of commercial power systems OTTAWA, Ontario, March 16, 2017 – At the upcoming 2017 Applied Power Electronics Conference and Exposition (APEC…
