2021年將達成 40 倍的産能擴張 氮化鎵功率半導體全球領導廠商 GaN Systems 今天宣布 GaN 功率電晶體產品出貨量已達兩千萬顆,製造夥伴正按計劃在 2021 年底前完成 40 倍的産能擴張 。 此次的産能擴張是為了滿足 GaN 功率電晶體在不同應用市場中的下一波訂單,除手機與電腦快充充電器及變電器外,GaN Systems 的功率電晶體也用於高階音響,數據中心電源,工業電機驅動器,雷射驅動器,醫療器材電源供應器,衛星和航空航太系統以及電動車動力系統中。 GaN Systems 完整且性能與可靠性受市場認證的 100V 和 650V 産品組合,提供不同產業客戶高效率、高功率密度的設計優勢,同時減小産品尺寸,重量和開發成本,這些 GaN功率半導體為電力電子系統所帶來的顯著性能提升,正與現存矽和 SiC功率半導體相較勁,並快速獲得市場認可。 GaN 在生產製造上的成本與 SiC 相比便宜很多,後者需要更昂貴和複雜的製造工藝。 增加 SiC 產能所需的成本比 GaN 整整高10倍。GaN 的製程現有矽製程相近,多數設備可沿用,因此在初期需要的資本投資較少,同時 GaN 基板也不像 SiC 那導昂貴,因此 GaN 電晶體的生產成本遠低於 SiC。隨技術不段演進,目前 GaN 電晶體的價格僅為幾年前的一半,故採用 GaN 功率電晶體設計的整體系統成本,與採用現有矽功率元件的設計相比,十分相近,甚至可能更低。 「我們在産品設計上的專業,産品廣度以及與客戶的合作關係,幫助我們建立業界最完整的氮化鎵功率電晶體產品組合。能達到這樣的里程碑,不僅來自於營運規模的快速增長,同時也因為我們製造夥伴台積電作為強勁後盾,提供滿足市場需求産能,」 GaN Systems 全球執行長 Jim Witham…
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New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to…
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New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to…
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The increasing popularity of GaN solutions in power electronics has prompted many companies to rethink the way they build their power systems. In the last few years, GaN has proven to be reliable and pushing the boundaries in smaller, lighter, and more efficient power systems in data centers, automobiles, consumer electronics, renewable energy systems, and…
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The increasing popularity of GaN solutions in power electronics has prompted many companies to rethink the way they build their power systems. In the last few years, GaN has proven to be reliable and pushing the boundaries in smaller, lighter, and more efficient power systems in data centers, automobiles, consumer electronics, renewable energy systems, and…
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GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the winners of the sixth annual “GaN Systems Cup” China Power Supply Society (CPSS) design competition at an awards ceremony at the CPSS Conference on December 21, 2020. The competition challenges top engineering teams from China’s leading universities to design new or…
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LEUVEN, BELGIUM – MinDCet, a leading power semiconductor design house, announces the introduction of the next generation GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN Systems GS61008P (E-mode GaN HEMTs). This high-end and high-performance solution is developed to allow power electronics designers to easily design-in GaN for 48V market applications,…
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LEUVEN, BELGIUM – MinDCet, a leading power semiconductor design house, announces the introduction of the next generation GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN Systems GS61008P (E-mode GaN HEMTs). This high-end and high-performance solution is developed to allow power electronics designers to easily design-in GaN for 48V market applications,…
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Vancouver, BC and Delft, Netherlands, Dec. 15, 2020 (GLOBE NEWSWIRE) — Chrysalix Venture Capital, a global technology venture capital firm that specializes in transformational industrial innovation, congratulates four of its portfolio companies that have been named on the 2021 Global Cleantech 100 list as the most likely to make a significant market impact over the…
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Latest IMS solutions raise the bar with increased output power and efficiency with high-κ IMS3 thermal designs OTTAWA, Ontario, December 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high…
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