GaN-based Half-Bridge Solution Making GaN Designs Easier

GaN-based Half-Bridge Solution Making GaN Designs Easier

LEUVEN, BELGIUM – MinDCet, a leading power semiconductor design house, announces the introduction of the next generation GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN Systems GS61008P (E-mode GaN HEMTs).GaN-based Half-Bridge Solution Making GaN Designs Easier

This high-end and high-performance solution is developed to allow power electronics designers to easily design-in GaN for 48V market applications, including step-down converters, boost converters, and class D audio applications.

The space technology-based MDC901 is a non-isolated 200V GaN gate driver with unprecedented gate drive strength exceeding 9 A, true floating programmable regulators, integrated charge pump, bootstrap diodes and extensive diagnostics. It is ideally suited for high-performance and high-reliability applications, where application diagnostics and GaN lifetime are key.

The MDC901-EVKHB evaluation kit features a 100V input step-down converter providing up to 30A of output current. The complete and compact power stage consists of the MDC901 in combination with two GS61008P E-mode GaN HEMTs. The evaluation board allows control of all MDC901 control IO’s (internal/external dead-time control, programmable dead-time and programmable gate voltage), as well as verification of all diagnostic outputs (undervoltage detection, gate drive monitoring and temperature sensing)

The evaluation kit contains all hardware to reliably connect the board to an external power source, as well as the required fan, heat sink, wiring and connectors to guarantee measurements under safe conditions. The evaluation kit is supported by GaN Systems and available for purchase through MinDCet.

About MinDCet

MinDCet leverages extensive expertise in high-voltage, power and mixed-signal ASIC design, delivering tailored integrated circuits. Our in-house production testing facilities allow medium volume production of ASICs. The core development activities are focused on wide-bandgap gate drivers (GaN and SiC), high-voltage (>650V), radiation-hardened and high-temperature ASICs for power control, sensing and motor driving applications.

“Enabling a more efficient and safe future”