GaN transistor thermal RC models enhance the accuracy of power system SPICE simulations OTTAWA, Ontario, February 3, 2017 – GaN Systems has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using GaN…
Above image: 250 W wireless charging device from the Imperial College London runs with GaN Systems’ GaN transistors at 6.78 and 13.56 MHz. GaN Systems’ enables high voltage, high power wireless charging OTTAWA, Ontario, January 16, 2017 – GaN Systems, the industry-leading enabler of high voltage, high current, and high-frequency wireless charging, has joined the…
The following article was written by Achim Scharf and published in the November 2016 issue of Power Electronics Europe. According to market researcher Yole 2015 – 2016 have been exciting years for the GaN power business – 600V GaN is today commercially available, after many ups and downs. And GaN power ICs have debuted, opening…
This article was originally published as an editorial in the November issue of Power Electronics Europe by editor Achim Scharf. Electronica 2016 in Munich is an example how electronics, particularly in the automotive industry, will change the world. Moving toward a longer-term goal, vehicles are on a path to become fully electric, reducing fossil fuel…
In this episode of PSDtv, originally recorded by Alix Paultre, CEO Jim Witham takes us through GaN Systems’ booth at electronica 2016, held in Munich, Germany this past November. Mr. Witham describes our latest advances and shows examples of how customers are using our latest GaN transistor products in their power systems. Watch on YouTube…
Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design OTTAWA, Ontario, November 4, 2016 – GaN Systems launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB).…
In this video the CE+T team describes the challenges they confronted and how they used GaN Systems transistors to develop the inverter that won Google and IEEE Little Box Challenge.
Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…
[UPDATE: This product has been selected an EDN Top 100 Product of 2016! The article originally appeared in EDN Tools & Learning as a Product Review.] The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required. Government regulations and increasingly stringent emissions standards compound the need…
GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.
