Part NumberGS-065-018-2-L
Design Note
Spice Models
Step File
Allegro Library
Altium Library

ECAD Model

RDS(on)78 mΩ
QG4 nC
Dimensions (mm)8.0 x 8.0 x 0.9


650V Enhancement Mode GaN Transistor

The GS-065-018-2-L is a 650V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-018-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Bottom-cooled, 8×8 mm PDFN package
  • RDS(on) = 78 mΩ
  • IDSmax,DC = 18 A / IDSmax,Pulse = 35 A
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • High switching frequency (> 1 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant


  • Consumer and Industrial Power Supplies
  • Power Adapters
  • LED Lighting Drivers
  • Fast Battery Charging
  • Power Factor Correction
  • Appliance and Industrial Motor Drives
  • Wireless Power Transfer

Related Video:

GaN Powered: Revolutionizing Today’s Most Power Demanding Industries

Skip to content