End of Life
No Longer In Development
| Part Number | GS-065-060-3-T |
|---|---|
| Downloads | Datasheet Spice Models Step File Altium Library ECAD Model |
| VDS | 650 V |
| IDS | 60 A |
| RDS(on) | 25 mΩ |
| QG | 14 nC |
| Dimensions (mm) | 9.2 x 7.8 x 0.49 |
| Cooling | Top-Side |
GS-065-060-3-T
650V Enhancement Mode GaN Transistor
The GS-065-060-3-T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- 650 V enhancement mode power transistor
- Top-cooled, low inductance GaNPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Simple gate drive Requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 9.2 x 7.8 mm2 footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
- AC-DC Converters
- DC-DC Converters
- Bridgeless Totem Pole PFC
- Inverters
- Energy Storage Systems
- On Board Battery Chargers
- Uninterruptable Power Supplies
- Solar Energy
- Industrial Motor Drives
- Laser Drivers
- Traction Drive
- Wireless Power Transfer
