OTTAWA, Ontario, September 14, 2021 – GaN Systems, the global leader in GaN power semiconductors, today announced the signing of a comprehensive Capacity Agreement with BMW Group for GaN Systems’ high-performance, automotive-grade GaN power transistors, which increase the efficiency and power density of critical applications in electric vehicles. GaN power semiconductors are a key ingredient…
OTTAWA, Canada AND PARIS, France, July 21, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, and BrightLoop Converters, a leading French power electronics company, today announced their strategic partnership to develop the latest AC/DC and DC/DC Converter products for electric motorsport and aerospace applications. Leveraging GaN Systems’ 650V GaN transistors,…
OTTAWA, Ontario, Canada, June 30, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today its participation at “PCIM Europe Digital Days,” taking place July 7–8, 2020. CEO Jim Witham will participate in two panel sessions, “GaN Devices – The Game-Changers” and “Power GaN: Past-Present-Future,” illustrating how GaN power semiconductors…
As we move into the next decade of the twenty-first century, it is abundantly clear that we can no longer take power for granted – not its production, distribution, or use. Data and energy are the interlinked and acknowledged power duo that fuels global economic growth. The increasing demand for electricity needs to be understood…
GaN Systems Looks Ahead to 2020 Game-Changing Technologies Associated With Power Electronics OTTAWA, ONTARIO, December 9, 2019 – For the past several decades, the subject of ‘power’ has been consistently viewed as a challenge focused primarily on the incremental improvement – be that by technology, by government regulations, or by shifting consumer behavior. Much attention has…
New solution significantly reduces system size, PCB footprint, and bill of material (BOM) costs OTTAWA, Ontario, Canada AND Phoenix, AZ, November 4, 2019 – GaN Systems, the global leader in GaN power semiconductors and ON Semiconductor, a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using…
This piece by Rob Coppinger was originally published at Electropages.com on September 18, 2019. Robots in the workplace can be wirelessly charged at a distance using Gallium Nitride transistor technology which can cope with the high energy levels needed. With more and more robots and autonomous vehicles in factories and other workplaces, recharging these machines…
This article was originally published on www.eetimes.com on September 24, 2019, written by Maurizio Di Paolo Emilio. Power semiconductor devices with gallium nitride (GaN) and silicon carbide (SiC) are gradually replacing their silicon-based counterparts, largely because using GaN or SiC power transistors can lead to more straightforward and efficient energy storage solutions. The combined GaN…
The second of a three-part series on The Rise of GaN-Based Power Systems: Technology and Market Overview by Paul Wiener, VP Strategic Marketing, GaN Systems To read the original article in Power Electronics World, click here. Part 1 of this series exploring gallium nitride (GaN) power devices provided a brief overview of GaN technology fundamentals,…
OTTAWA, Ontario, Canada, May 28, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, is sponsoring the distinguished China Power Supply Society (CPSS) design competition, now underway with a record-breaking 40 engineering teams entering the competition from leading universities throughout China. GaN Systems recently participated in the kick-off ceremony at Tsinghua University…
