GaN Systems Uncategorized Articles

The Dawn of the Sustainable Electric Vehicle Revolution

Since the first mass market electric vehicle (EV), the Nissan Leaf, was introduced a decade ago, the drumbeat has been loud and persistent about the environmental promise of the electrification of transportation. But we’ve fallen short many times despite high hopes and the best of intentions. Social forces, government policy, business priorities, and technology innovation…

Using simulation to optimize GaN-powered designs

Comparisons of transistor device models and simulation techniques illustrate which approach works best for specific design scenarios. This article, written by Lei Kou and Lucas Lu, was originally published on Power Electronics Tips, October 27, 2021. Read the full article here.  When designing a new system based on Gallium Nitride (GaN) power transistors, simulation provides…

GaN Systems Signs Semiconductor Capacity Agreement with BMW

OTTAWA, Ontario, September  14, 2021 – GaN Systems, the global leader in GaN power semiconductors, today announced the signing of a comprehensive Capacity Agreement with BMW Group for GaN Systems’ high-performance, automotive-grade GaN power transistors, which increase the efficiency and power density of critical applications in electric vehicles. GaN power semiconductors are a key ingredient…

BrightLoop Converters and GaN Systems Collaborate to Bring Disruptive Power Electronics to the Road Track and the Skies

OTTAWA, Canada AND PARIS, France, July 21, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, and BrightLoop Converters, a leading French power electronics company, today announced their strategic partnership to develop the latest AC/DC and DC/DC Converter products for electric motorsport and aerospace applications. Leveraging GaN Systems’ 650V GaN transistors,…

GaN Systems Shows Why GaN is a Game Changer at PCIM 2020

OTTAWA, Ontario, Canada, June 30, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today its participation at “PCIM Europe Digital Days,” taking place July 7–8, 2020. CEO Jim Witham will participate in two panel sessions, “GaN Devices – The Game-Changers” and “Power GaN: Past-Present-Future,” illustrating how GaN power semiconductors…

The 2020 Top Technology Trends in Power-Reliant Industries

As we move into the next decade of the twenty-first century, it is abundantly clear that we can no longer take power for granted – not its production, distribution, or use. Data and energy are the interlinked and acknowledged power duo that fuels global economic growth. The increasing demand for electricity needs to be understood…

The 2020 Top Technology Trends in Power

GaN Systems Looks Ahead to 2020 Game-Changing Technologies Associated With Power Electronics OTTAWA, ONTARIO, December 9, 2019 – For the past several decades, the subject of ‘power’ has been consistently viewed as a challenge focused primarily on the incremental improvement – be that by technology, by government regulations, or by shifting consumer behavior. Much attention has…

Half-Bridge Evaluation Board from GaN Systems and ON Semiconductor Demonstrates Next Performance Leap in GaN

New solution significantly reduces system size, PCB footprint, and bill of material (BOM) costs OTTAWA, Ontario, Canada AND Phoenix, AZ, November 4, 2019 – GaN Systems, the global leader in GaN power semiconductors and ON Semiconductor, a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using…

Article: GaN Transistor Technology to Wirelessly Charge Workplace Robots

This piece by Rob Coppinger was originally published at Electropages.com on September 18, 2019. Robots in the workplace can be wirelessly charged at a distance using Gallium Nitride transistor technology which can cope with the high energy levels needed. With more and more robots and autonomous vehicles in factories and other workplaces, recharging these machines…

GaN Systems is featured in EE Times

Article: GaN is driving power semiconductors

This article was originally published on www.eetimes.com on September 24, 2019, written by Maurizio Di Paolo Emilio. Power semiconductor devices with gallium nitride (GaN) and silicon carbide (SiC) are gradually replacing their silicon-based counterparts, largely because using GaN or SiC power transistors can lead to more straightforward and efficient energy storage solutions. The combined GaN…