Or curious to learn more about how to incorporate GaN into your next power system design and take advantage of the benefits of higher efficiency and lower size, weight, and total system cost? GaN Systems recently published new materials in our Design Center, a one stop source that aims to help customers make system design…
This article was originally published at Power Electronics News on May 12, 2020. Read the rest of the piece here. GaN (Gallium Nitride) is experiencing surging interests across multiple segments of the electronics industry and gaining widespread acceptance because of efficiency and productivity improvements manufacturers expect from its use. There’s a major shift happening in…
This article was originally published at Power Electronics News on May 12, 2020. Read the rest of the piece here. GaN (Gallium Nitride) is experiencing surging interests across multiple segments of the electronics industry and gaining widespread acceptance because of efficiency and productivity improvements manufacturers expect from its use. There’s a major shift happening in…
GaN Systems CEO Jim Witham joins the Power Systems Design PSDcast for a conversation focused on automotive and what’s next for GaN applications. Listen in here. The All-GaN Vehicle was developed by Nagoya University, with tech from GaN Systems, and it demonstrates the viability of GaN in the automotive space and any applications calling for…
GaN Systems CEO Jim Witham joins the Power Systems Design PSDcast for a conversation focused on automotive and what’s next for GaN applications. Listen in here. The All-GaN Vehicle was developed by Nagoya University, with tech from GaN Systems, and it demonstrates the viability of GaN in the automotive space and any applications calling for…
This article was published in full in IEEE Transactions on Transportation Electrification. Authors: R. Hou, Y. Shen, H. Zhao, H. Hu, J. Lu and T. Long Abstract: Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless,…
This article was published in full in IEEE Transactions on Transportation Electrification. Authors: R. Hou, Y. Shen, H. Zhao, H. Hu, J. Lu and T. Long Abstract: Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless,…
Invites Visitors to Virtually Explore How GaN is Leading the Power Electronics Revolution WHAT: OTTAWA, ONTARIO – April 6, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today launched its Virtual Experience site displaying the latest technology innovations that are using GaN transistors as a cornerstone technology for smaller, lighter,…
Invites Visitors to Virtually Explore How GaN is Leading the Power Electronics Revolution WHAT: OTTAWA, ONTARIO – April 6, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today launched its Virtual Experience site displaying the latest technology innovations that are using GaN transistors as a cornerstone technology for smaller, lighter,…
OTTAWA, Ontario, February 25, 2020 – GaN Systems, the global leader in GaN power semiconductors, will showcase how its leading GaN transistors are a cornerstone technology for power electronics equipment. New transistor products and power modules, reference designs and tools, and customer demonstrations in consumer electronics, industrial, and automotive industries will be on display at…
