GaN Systems Power & Energy Articles

GaN Dominates the Conversation at Leading Power Electronics Show – Key Takeaways from Applied Power Electronics Conference & Exposition (APEC) 2018

The who’s who in the power electronics industry descended in San Antonio, Texas recently for the annual Applied Power Electronics Conference & Exposition (APEC). For those unfamiliar with APEC, it is one of the leading events of the power electronics industry, bringing together professionals from all sectors from around the world – designers, engineers, manufacturers,…

AirFuel Wireless Power Event & Developer’s Forum 2018

Last week, GaN Systems exhibited and spoke at the first annual AirFuel Wireless Power Conference & Developers Forum held in Shenzhen, China.   The conference highlighted the various aspects of AirFuel Resonant technology created to help companies to design, develop and market product with Resonant technology.   AirFuel Alliance plays a central role in defining…

Data Centers and Energy Efficiency

“The Conversation” is a video series in which GaN Systems’ executives engage in conversation with leaders in industries that are being revolutionized as a result of changes in power technologies. Change for these companies is not limited to their bottom line, but extends out to issues around technology’s impact on global energy consumption.  Industries explored…

GaN Systems First To Announce Testing Success Beyond 10X Of JEDEC Requirements

San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 6, 2018 – GaN Systems, the global leader in GaN power semiconductors, today announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices. This is 10X the 1,000-hour requirement to meet JEDEC qualification. As the power electronics industry increases adoption…

Record-Setting 100 V/120 A GaN Power Transistor Introduced by GaN Systems

San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 5, 2018 – GaN Systems, the global leader in GaN power semiconductors, today unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of…

GaN Systems Announces World’s Highest Current Rated GaN Power Transistor

OTTAWA, Ontario, Canada, February 28, 2018 – GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages…

Power Industry – Then vs. Now by Jennifer Ajersch

From renewable energy and data centers to electric vehicles and smart appliances, the role that power electronics plays in these systems is no longer that of a supporting cast member. In many cases, power electronics is taking center stage. I started my career in the power industry in the early 1990s, and at that time,…

Shorter Time to Market Now in Play with New GaN Systems’ High-Performance Buck Converter Evaluation Board

OTTAWA, Ontario, Canada, February 27, 2018– GaN Systems, the global leader in GaN power semiconductors, today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistor and pSemi’s PE29101 integrated high-speed driver. The outputs of the pSemi driver can provide switching transition speeds in the sub nano-second…

Power Technologies and the Future of the Auto Industry

“The Conversation” is a video series in which GaN Systems’ executives engage in conversation with leaders in industries that are being revolutionized as a result of changes in power technologies. Change for these companies is not limited to their bottom line, but extends out to issues around technology’s impact on global energy consumption.  Industries explored…

Design Power Electronics: HF Power Semiconductor Modeling

Download PDF Now > This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits.