GaN Systems Power & Energy Articles

DELTA JOINS BMW i VENTURES AS STRATEGIC INVESTOR IN GAN SYSTEMS

OTTAWA, Ontario, December 11, 2017 – GaN Systems, the global leader in GaN power semiconductors, has announced that Delta, the worldwide leader in power systems, has joined BMW i Ventures in participation of a strategic investment in GaN Systems. GaN Systems plans to use the funding to expand global sales and accelerate product innovation to…

The Top 2018 Trends Impacting the World’s Power and Energy Footprint – Challenges Will Be Met by A Wave of Power Systems Designed to Be Lighter, Smaller, and More Efficient

OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors,…

“It Ain’t So Hard…” by Larry Spaziani

GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…

GaN Systems Honors CPSS

GaN Systems Honors China Power Supply Society Competition Winners

OTTAWA, ONTARIO, December 1, 2017 – Winners from the annual China Power Supply Association (CPSS) competition were honored at the organization’s annual meeting on November 22, 2017 by sponsor GaN Systems, the global leader of GaN (gallium nitride) power semiconductors, alongside CPSS, China Power Society Science Popularization Committee, and Nanjing University of Aeronautics and Astronautics.…

Critical Transient Processes Of Enhancement-Mode Gan HEMTs

In High-Efficiency And High-Reliability Applications Download Now > Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by GaN Systems, analytically models its switching behaviors, summarizes the impact…

power module 2 video

Using GaN Transistors in Power Modules

The old way of creating power modules with gallium-nitride power devices was to just substitute GaN devices for silicon equivalents in the module chassis. The resulting modules just didn’t perform up to their potential. As explained by GaN Systems’ Jim Witham in this short video interview conducted by WHWT Media’s Lee Teschler, new module designs…

Webinar: The Benefits Of Gallium Nitride Power Switching Transistors

Download PDF Now > This webinar sponsored by RichardsonRFPD and hosted by IEEE GlobalSpec introduces GaN Systems’ products and capabilities, and compares them to other GaN devices and silicon MOSFET devices. Examples in key applications are reviewed. Overview GaN Systems introduced Enhancement Mode GaN Transistors to the world in 2014, unveiling both 100V and 650V devices. Since…

48V Mild Hybrid Systems

Market Needs and Technical Solutions Download Now > This presentation from AVL Engineering and Technology looks at the developing 48V mild hybrid market. The powertrains technological and regulatory drivers are reviewed as well as the challenges. This forward-looking analysis projects the market needs through 2020.