GaN Systems, the global leader in GaN power semiconductors, announced today the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters.

High performance and ultra-fast switching offered by GaN Systems transistors meet rigorous automotive market requirements.

The high frequency properties of GaN combined with GaN Systems’ proprietary Island Technology® layout, and GaNPX® packaging provides the high power, low loss performance required in today’s power electronics. Power engineers take advantage of GaN power transistor features to make their products 50% smaller and lighter and reduce system costs. This new product from GaN Systems features:

  • AEC-Q101 and AutoQual+™ qualified
  • Low RDS(on) (25 mΩ) and ultra-low loss figure of merit (FOM)
  • 60A IDS rating
  • Small, 11mm x 9mm PCB footprint with dual gate pads for optimal board layout

“We’re setting high benchmarks with our new automotive products and qualification testing that exceed industry standards,” said Jim Witham, CEO at GaN Systems. “Automotive is a key market for GaN Systems, where reducing battery size, extending driving range, and keeping the power electronics systems small and lightweight are all imperative to current and future EV design.”

For more information, download the data sheet, or contact GaN Systems.