A scenario might be dv/dt dip due to loop inductance: deltaV=Lp*di/dt. The breakdown voltage of GaN is >750V. As shown in our datasheet, the drain-source of GaN can withstand <1uS 750V pulse. So under surge conditions, GaN can operate through the surge without avalanching.
[av_toggle title='What are reasonable design margins for GaN part selection in terms of voltage current ratings' tags='' custom_id='' av_uid='av-1ya430z']
The derating ratio is usually designed according to the product category. It is recommended that consumer products have 5~10% voltage and current margin, and industrial products have 20% voltage and current margin.
[av_toggle title='Can we use the thermal PAD of GS66516T to conduct Ids current' tags='' custom_id='' av_uid='av-1rxo27n']
No. Although the thermal pad is connected to source, it is for thermal connection only, not for electrical connection.
[av_toggle title='In your top cooled devices, is the thermal pad internally connected to source or should we connect it manually?' tags='' custom_id='' av_uid='av-fse7n']
Except for our GS66508P and GS61008P, for all other devices, you don’t need to manually connect source to the thermal pad. They are internally connected. Only for the GS66508P and GS61008P part numbers is manual connection required.