Part NumberGS-065-120-1-D
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Evaluation BoardsGSM-065-120-1-N-0
IDS120 A
RDS(on)12 mΩ
QG25 nC
Dimensions (mm)12.56 x 5.60


650V Enhancement Mode GaN Transistor

The GS-065-120-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Easy gate drive requirements
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 12.56 x 5.60 mm PCB footprint
  • RoHS 6 compliant
  • Dual gate drive for optimized layout & paralleling


  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • On Board Battery Chargers
  • Traction Drive
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar Power
  • Fast Battery Charging
  • DC-DC converter



The GSM-065-120-1 and GSM065-240-1 evaluation modules are available to facilitate evaluation of the GS-065-120-1-D die.  Two versions of the evaluation module are presently being offered:

  1. The 120A GSM-065-120-1-N-0 contains one single GS-065-120-1-D
  2. The 240A GSM-065-240-1-N-0 contains two GS-065-120-1-D, connected in parallel for higher current applications and as a demonstration vehicle for general paralleling of the GS-065-120-1-D