https://gansystems.com/wp-content/uploads/2018/12/GS66508T-EVBHB-video.jpg 1188 1188 LaunchSnap https://gansystems.com/wp-content/uploads/2018/02/gan-systems-logo-fc-340x156.png LaunchSnap2015-10-23 15:32:062019-07-03 20:43:58GS66508T-EVBHB High Current Half Bridge Evaluation Board
GS66508T-EVBHB High Current Half Bridge Evaluation Board
The GS66508T-EVBHB evaluation board (EVB) is designed to demonstrate the performance of GaN Systems’ 650V GaN enhancement mode high electron mobility transistor (E-HEMT) devices. The EVB is a fully functional half bridge power stage consisting of two 650V GaN E-HEMTs (top side cooled GS66508T, 30A/55mΩ), gate drive power supply, half bridge gate drivers and heatsink. To evaluate the performance of GaN E-HEMT devices in real power circuits, the EVB can be easily configured into any half bridge based topology.
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