The GS66508T-EVBHB evaluation board (EVB) is designed to demonstrate the performance of GaN Systems’ 650V GaN enhancement mode high electron mobility transistor (E-HEMT) devices. The EVB is a fully functional half bridge power stage consisting of two 650V GaN E-HEMTs (top side cooled GS66508T, 30A/55mΩ), gate drive power supply, half bridge gate drivers and heatsink. To evaluate the performance of GaN E-HEMT devices in real power circuits, the EVB can be easily configured into any half bridge based topology.

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