GaN Systems 800V 11kW OBC Reference Design – Key Insights
GaN OBC Changes the Game for EV Automotive Design
Key Features of the OBC Design
- 36% higher power density compared to silicon carbide (SiC) transistor designs
- 15% lower Bill of Materials (BOM) cost compared to silicon carbide (SiC) transistor designs
- AC/DC stage peak efficiency>99%, DC/DC stage peak efficiency>98.5%
- Reduced total semiconductor power loss
- Improved thermal performance
How we did it
- GaN Systems transistors
- Tested to AEC-Q and the rigorous AutoQual+™ quality and reliability criteria
- Mounted on thermally efficient IMS substrates
- 3-Level PFC stage design
- Naturally balanced flying capacitor in a very small size
- Inductor improvements versus SiC: 80% reduction in inductor value, 75% reduction in inductor volume resulting in 6X higher power density
- 3-Level DAB stage design
- Transformer improvements versus SiC: 40% reduction in volume, 13% reduction in losses, 1.6X increase in power density
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